Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

Xiao, Xiaoyin; Fischer, Arthur J.; Wang, George T.; Lu, Ping; Koleske, Daniel D.; Coltrin, Michael E.; Wright, Jeremy B.; Liu, Sheng; Brener, Igal; Subramania, Ganapathi S.; Tsao, Jeffrey Y.

doi:10.1021/nl502151k

Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

Journal Article · Fri Aug 29 00:00:00 EDT 2014 · Nano Letters

DOI:https://doi.org/10.1021/nl502151k· OSTI ID:1347347

Xiao, Xiaoyin ^[1]; Fischer, Arthur J. ^[1]; Wang, George T. ^[1]; Lu, Ping ^[1]; Koleske, Daniel D. ^[1]; Coltrin, Michael E. ^[1]; Wright, Jeremy B. ^[2]; Liu, Sheng ^[2]; Brener, Igal ^[1]; Subramania, Ganapathi S. ^[1]; Tsao, Jeffrey Y. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Solid-State Lighting Science Energy Frontier Research Center
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Solid-State Lighting Science Energy Frontier Research Center. Center for Integrated Nanotechnologies

In this paper, we demonstrate a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10 nm size regime: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. We show that quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and that the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength. Finally, low-temperature photoluminescence from ensembles of such QDs have peak wavelengths that can be tunably blue shifted by 35 nm (from 440 to 405 nm) and have line widths that narrow by 3 times (from 19 to 6 nm).

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1347347

Alternate ID(s):: OSTI ID: 1167913
OSTI ID: 1384198

Report Number(s):: SAND--2014-1138J; 537321

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 10 Vol. 14; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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3D Photoluminescent Nanostructures Containing Quantum Dots Fabricated by Two-Photon Polymerization: Influence of Quantum Dots on the Spatial Resolution of Laser Writing Peng, Ying; Jradi, Safi; Yang, Xuyong Advanced Materials Technologies, Vol. 4, Issue 2 https://doi.org/10.1002/admt.201800522	journal	November 2018
III‐Nitride Micro‐LEDs for Efficient Emissive Displays Wierer, Jonathan J.; Tansu, Nelson Laser & Photonics Reviews, Vol. 13, Issue 9 https://doi.org/10.1002/lpor.201900141	journal	August 2019
Scalable high-precision tuning of photonic resonators by resonant cavity-enhanced photoelectrochemical etching Gil-Santos, Eduardo; Baker, Christopher; Lemaître, Aristide Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/ncomms14267	journal	January 2017
Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching Wei, Xiongliang; Al Muyeed, Syed Ahmed; Peart, Matthew R. Applied Physics Letters, Vol. 113, Issue 12 https://doi.org/10.1063/1.5046857	journal	September 2018
Formation of spherical-shaped GaN and InN quantum dots on curved SiN/Si surface Choi, Ilgyu; Lee, Hyunjoong; Lee, Cheul-Ro Nanotechnology, Vol. 29, Issue 31 https://doi.org/10.1088/1361-6528/aac414	journal	June 2018
Single photon emission from top-down etched III-nitride quantum dots Hou, Yaonan; Wang, Yong; Ai, Qingkang Nanotechnology, Vol. 31, Issue 13 https://doi.org/10.1088/1361-6528/ab6477	journal	January 2020
III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures Anderson, P. Duke; Fischer, Arthur J.; Koleske, Daniel D. Optical Materials Express, Vol. 8, Issue 11 https://doi.org/10.1364/ome.8.003543	journal	January 2018

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36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
InGaN
photoelectrochemical etching
quantum dots
quantum-size effects

Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

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