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Title: PLZT capacitor on glass substrate

Patent ·
OSTI ID:1234681
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A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-06CH11357
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Number(s):
9,230,739
Application Number:
14/065,837
OSTI ID:
1234681
Resource Relation:
Patent File Date: 2013 Oct 29
Country of Publication:
United States
Language:
English

References (7)

Ceramic capacitor having a bismuth-containing silver-doped dielectric of (Pb,La) (Zr,Ti)O.sub.3 patent January 1979
Lead silicate based capacitor structures patent July 2000
Method of fabricating an electronic package having underfill standoff patent October 2006
Electronic package for image sensor, and the packaging method thereof patent June 2008
Flip-chip packaging of a photo-sensor die on a transparent substrate patent February 2009
Image sensor camera module including a protruding portion and method of manufacturing the same patent November 2011
Method for fabrication of crack-free ceramic dielectric films patent February 2014

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