Linear magnetoresistance caused by mobility fluctuations in n-doped Cd3As2

Narayanan, A.; Watson, M. D.; Blake, S. F.; Bruyant, N.; Drigo, L.; Chen, Y. L.; Prabhakaran, D.; Yan, B.; Felser, C.; Kong, T.; Canfield, P. C.; Coldea, A. I.; Mazin, I. I.

doi:10.1103/PhysRevLett.114.117201

Title: Linear magnetoresistance caused by mobility fluctuations in $n$ -doped ${Cd}_{3} {As}_{2}$

Journal Article · Thu Mar 19 00:00:00 EDT 2015 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.114.117201· OSTI ID:1234455

Narayanan, A. ^[1]; Watson, M. D. ^[1]; Blake, S. F. ^[1]; Bruyant, N. ^[2]; Drigo, L. ^[2]; Chen, Y. L. ^[1]; Prabhakaran, D. ^[1]; Yan, B. ^[3]; Felser, C. ^[3]; Kong, T. ^[4]; Canfield, P. C. ^[4]; Coldea, A. I. ^[1]; Mazin, I. I. ^[5]

Univ. of Oxford, Oxford (United Kingdom)
Lab. National des Champs Magnetiques Intenses (CNRS), Toulouse (France)
Max-Planck-Institut fur Chemische Physik fester Stoffe, Dresden (Germany)
Iowa State Univ., Ames, IA (United States)
Naval Research Lab., Washington, D.C. (United States)

Cd₃As₂ is a candidate three-dimensional Dirac semimetal which has exceedingly high mobility and nonsaturating linear magnetoresistance that may be relevant for future practical applications. We report magnetotransport and tunnel diode oscillation measurements on Cd₃As₂, in magnetic fields up to 65 T and temperatures between 1.5 and 300 K. We find that the nonsaturating linear magnetoresistance persists up to 65 T and it is likely caused by disorder effects, as it scales with the high mobility rather than directly linked to Fermi surface changes even when approaching the quantum limit. As a result of the observed quantum oscillations, we determine the bulk three-dimensional Fermi surface having signatures of Dirac behavior with a nontrivial Berry phase shift, very light effective quasiparticle masses, and clear deviations from the band-structure predictions. In very high fields we also detect signatures of large Zeeman spin splitting (g~16).

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Research Organization:: Ames Laboratory (AMES), Ames, IA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: EP/L001772/1; EP/I004475/1; EP/I017836/1EP/I004475/1; EP/K04074X/1; AC02- 07CH11358; N66001-11-1-4105

OSTI ID:: 1234455

Alternate ID(s):: OSTI ID: 1179919

Report Number(s):: IS-J-8852; PRLTAO

Journal Information:: Physical Review Letters, Vol. 114, Issue 11; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 289 works

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Quantized surface transport in topological Dirac semimetal films Nishihaya, Shinichi; Uchida, Masaki; Nakazawa, Yusuke arXiv https://doi.org/10.48550/arxiv.1904.09894	text	January 2019

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Title: Linear magnetoresistance caused by mobility fluctuations in $n$ -doped ${Cd}_{3} {As}_{2}$