Two-stage proximity-induced gap opening in topological-insulator–insulating-ferromagnet (BixSb1-x)2Te3 – EuS bilayers

Yang, Qi I.; Kapitulnik, Aharon

doi:10.1103/physrevb.98.081403

Title: Two-stage proximity-induced gap opening in topological-insulator–insulating-ferromagnet ${({Bi}_{x} {Sb}_{1 - x})}_{2} {Te}_{3}$ – $EuS$ bilayers

Journal Article · Thu Aug 09 00:00:00 EDT 2018 · Physical Review B

DOI:https://doi.org/10.1103/physrevb.98.081403· OSTI ID:1468727

Yang, Qi I. ^[1]; Kapitulnik, Aharon ^[2]

Stanford Univ., CA (United States). Dept. of Physics; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
Stanford Univ., CA (United States). Dept. of Physics and Dept. of Applied Physics; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials

To further investigate the interplay between ferromagnetism and topological insulators, thin films of the low-carrier topological insulator (Bi_x Sb_{1 - x})₂ Te₃ were deposited on the insulating ferromagnet EuS (100) in situ. AC susceptibility indicates magnetic anomalies between T ≈ 30 K and T ≈ 60 K , well above the Curie temperature T_C ≈ 15 K of EuS. When the Fermi level is close to the Dirac point and the surface state dominates the electric conduction, sharp increases in resistance with decreasing temperatures were observed concurrently with the magnetic anomalies. Positive-negative magnetoresistance crossovers were observed at the Curie temperature, which seem only to appear when the sheet resistance exceeds the Mott-Ioffe-Regel limit h/e². Finally, a two-stage gap-opening process due to magnetic proximity is proposed.

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Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: ECCS-1542152; AC02-76SF00515; N66001-11-1-4105

OSTI ID:: 1468727

Alternate ID(s):: OSTI ID: 1463762

Journal Information:: Physical Review B, Vol. 98, Issue 8; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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Title: Two-stage proximity-induced gap opening in topological-insulator–insulating-ferromagnet ${({Bi}_{x} {Sb}_{1 - x})}_{2} {Te}_{3}$ – $EuS$ bilayers