Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

Venkatesh, S.; Franklin, J. B.; Ryan, M. P.; Lee, J. -S.; Ohldag, Hendrik; McLachlan, M. A.; Alford, N. M.; Roqan, I. S.

doi:10.1063/1.4905585

Title: Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

Journal Article · Wed Jan 07 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4905585· OSTI ID:1228467

Venkatesh, S. ^[1]; Franklin, J. B. ^[2]; Ryan, M. P. ^[3]; Lee, J. -S. ^[4]; Ohldag, Hendrik ^[4]; McLachlan, M. A. ^[3]; Alford, N. M. ^[3]; Roqan, I. S. ^[1]

Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
Department of Materials, Imperial College London, London SW7 2AZ, United Kingdom, Energy Research Institute at Nanyang Technological University (ERI@N), Research Technoplaza, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553
Department of Materials, Imperial College London, London SW7 2AZ, United Kingdom
Stanford Synchrotron Radiation Light source (SLAC), National Accelerator Laboratory, Menlo Park, California 94025, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1228467

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 117 Journal Issue: 1; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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References (41)

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