Defect-band mediated ferromagnetism in Gd-doped ZnO thin films
Journal Article
·
· Journal of Applied Physics
- Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom)
- Stanford Synchrotron Radiation Light source (SLAC), National Accelerator Laboratory, Menlo Park, California 94025 (United States)
Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (
- OSTI ID:
- 22399207
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes
Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions
Lack of ferromagnetism in n-type cobalt-doped ZnO epitaxial thin films
Journal Article
·
Fri Feb 20 23:00:00 EST 2015
· Journal of Applied Physics
·
OSTI ID:22413130
Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions
Journal Article
·
Tue May 07 00:00:00 EDT 2013
· Journal of Applied Physics
·
OSTI ID:22102396
Lack of ferromagnetism in n-type cobalt-doped ZnO epitaxial thin films
Journal Article
·
Fri May 23 00:00:00 EDT 2008
· New Journal of Physics
·
OSTI ID:937028
Related Subjects
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CONCENTRATION RATIO
DOPED MATERIALS
ELECTRONIC STRUCTURE
ENERGY BEAM DEPOSITION
FERMI LEVEL
FERROMAGNETISM
GADOLINIUM COMPOUNDS
LASER RADIATION
MAGNETORESISTANCE
OXYGEN
PRESSURE DEPENDENCE
PULSED IRRADIATION
SPIN
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
ZINC OXIDES
GENERAL PHYSICS
CONCENTRATION RATIO
DOPED MATERIALS
ELECTRONIC STRUCTURE
ENERGY BEAM DEPOSITION
FERMI LEVEL
FERROMAGNETISM
GADOLINIUM COMPOUNDS
LASER RADIATION
MAGNETORESISTANCE
OXYGEN
PRESSURE DEPENDENCE
PULSED IRRADIATION
SPIN
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
ZINC OXIDES