Room temperature ferrimagnetism and ferroelectricity in strained, thin films of BiFe0.5Mn 0.5O3
- Univ. of Cambridge, Cambridge (United Kingdom). Dept. of Materials Science
- Rutherford Appleton Lab., Didcot (United Kingdom). ISIS, Science and Technology Facilities Council
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies
- SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource
- Texas A & M Univ., College Station, TX (United States). Dept. of Electrical and Computer Engineering
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Korea Basic Science Institute, Daejeon (Republic of Korea). Division of Electron Microscopic Research
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
- Univ. of Glasgow, Glasgow (United Kingdom). SUPA School of Physics and Astronomy
- SciTech Daresbury, Warrington (United Kingdom). SuperSTEM
In this study, highly strained films of BiFe0.5Mn0.5O3 (BFMO) grown at very low rates by pulsed laser deposition were demonstrated to exhibit both ferrimagnetism and ferroelectricity at room temperature and above. Magnetization measurements demonstrated ferrimagnetism (TC ~ 600K), with a room temperature saturation moment (MS) of up to 90 emu/cc (~0.58μB/f.u) on high quality (001) SrTiO3. X-ray magnetic circular dichroism showed that the ferrimagnetism arose from antiferromagnetically coupled Fe3+ and Mn3+ . While scanning transmission electron microscope studies showed there was no long range ordering of Fe and Mn, the magnetic properties were found to be strongly dependent on the strain state in the films. The magnetism is explained to arise from one of three possible mechanisms with Bi polarization playing a key role. A signature of room temperature ferroelectricity in the films was measured by piezoresponse force microscopy and was confirmed using angular dark field scanning transmission electron microscopy. The demonstration of strain induced, high temperature multiferroism is a promising development for future spintronic and memory applications at room temperature and above.
- Research Organization:
- Univ. of Cambridge (United Kingdom); Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Engineering and Physical Sciences Research Council; European Research Council (ERC)
- Grant/Contract Number:
- AC52-06NA25396; AC02-98CH10886; DMR-1007969; DMR-1401266; AC05-00OR22725
- OSTI ID:
- 1212452
- Alternate ID(s):
- OSTI ID: 1265328
- Journal Information:
- Advanced Functional Materials, Vol. 24, Issue 47; ISSN 1616-301X
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Ferroelectric deaging effect of Zr{sup 4+} ions on sol–gel-derived BiFe{sub 0.95}Mn{sub 0.05}O{sub 3} thin films
Unraveling the magnetic properties of BiFe{sub 0.5}Cr{sub 0.5}O{sub 3} thin films