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Title: 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 mΩ · cm2), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.
 [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [3] ;  [3] ;  [1] ;  [2] ;  [2]
  1. Univ. of Notre Dame, IN (United States)
  2. Cornell Univ., Ithaca, NY (United States)
  3. IQE, Westborough, MA (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0741-3106; TRN: US1500478
Grant/Contract Number:
Accepted Manuscript
Journal Name:
IEEE Electron Device Letters
Additional Journal Information:
Journal Volume: 36; Journal Issue: 4; Journal ID: ISSN 0741-3106
Research Org:
Univ. of Notre Dame, IN (United States)
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Contributing Orgs:
Cornell University, Ithaca, NY (United States); IQE/HRL, Westborough, MA (United States)
Country of Publication:
United States
42 ENGINEERING; Schottky barrier diode, GaN on Silicon, Breakdown voltage, High voltage device, AlGaN/GaN, Field plate