Low-Defect Heteroepitaxy on Porous Si Substrates: Cooperative Research and Development Final Report
In this collaboration, NREL will grow Ge, SiGe, and III-V layers on porous Si (pSi) substrates prepared either by Crystal Solar or at NREL. The intent is to grow low-defect epitaxial III-V alloys using the porous Si layer to prevent defect formation. Finally, we aim to fabricate solar cells from the III-V layers to prove the electronic quality.
- Publication Date:
- OSTI Identifier:
- Report Number(s):
- DOE Contract Number:
- Resource Type:
- Technical Report
- Research Org:
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Crystal Solar, Santa Clara, CA (United States)
- Sponsoring Org:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
- Country of Publication:
- United States
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE CRADA; epitaxial; III-V layers
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