Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy

Journal Article · Mon Jun 08 04:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3154548· OSTI ID:21294146

Grassman, T J; Brenner, M R; Ringel, S A ^[1]; Rajagopalan, S; Unocic, R; Dehoff, R; Mills, M; Fraser, H ^[2]

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1. Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)
2. Department of Materials Science and Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

GaP films were grown on offcut Si(001) substrates using migration enhanced epitaxy nucleation followed by molecular beam epitaxy, with the intent of controlling and eliminating the formation of heterovalent (III-V/IV) nucleation-related defects--antiphase domains, stacking faults, and microtwins. Analysis of these films via reflection high-energy electron diffraction, atomic force microscopy, and both cross-sectional and plan-view transmission electron microscopies indicate high-quality GaP layers on Si that portend a virtual GaP substrate technology, in which the aforementioned extended defects are simultaneously eliminated. The only prevalent remaining defects are the expected misfit dislocations due to the GaP-Si lattice mismatch.

• OSTI ID: 21294146
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 94; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
DISLOCATIONS
ELECTRON DIFFRACTION
GALLIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
NUCLEATION
SEMICONDUCTOR MATERIALS
SILICON
STACKING FAULTS
SUBSTRATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY