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Title: Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

Patent ·
OSTI ID:1164345
;

Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-08GO28308
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Number(s):
8,895,416
Application Number:
13/793,626
OSTI ID:
1164345
Country of Publication:
United States
Language:
English

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