Structure and switching of in-plane ferroelectric nano-domains in strained PbxSr1-xTiO3 thin films
Journal Article
·
· Nature Communications
OSTI ID:1147697
- University of Groningen, The Netherlands
- ORNL
- University of Wisconsin, Madison
Nanoscale ferroelectrics, the active elements of a variety of nanoelectronic devices, develop denser and richer domain structures than the bulk counterparts. With shrinking device sizes understanding and controlling domain formation in nanoferroelectrics is being intensely studied. Here we show that a precise control of the epitaxy and the strain allows stabilizing a hierarchical domain architecture in PbxSr1-xTiO3 thin films, showing periodic, purely in-plane polarized, ferroelectric nano-domains that can be switched by a scanning probe.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1147697
- Journal Information:
- Nature Communications, Vol. 5
- Country of Publication:
- United States
- Language:
- English
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