High Velocity, Low‐Voltage Collective In‐Plane Switching in (100) BaTiO 3 Thin Films
- Department of Physics DTU Danmarks Tekniske Universitet Kgs. Lyngby 2800 Denmark, Department of Materials Science and Engineering NTNU Norwegian University of Science and Technology Trondheim NO‐7491 Norway
- Department of Computer Science and Engineering Lehigh University Bethlehem PA 18015 USA
- The Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA
- Department of Materials Science and Engineering NTNU Norwegian University of Science and Technology Trondheim NO‐7491 Norway
- Department of Materials Science and Engineering Lehigh University Bethlehem PA 18015 USA, Department of Mechanical Engineering and Mechanics Drexel University Philadelphia PA 19104 USA
Abstract Ferroelectrics are being increasingly called upon for electronic devices in extreme environments. Device performance and energy efficiency is highly correlated to clock frequency, operational voltage, and resistive loss. To increase performance it is common to engineer ferroelectric domain structure with highly‐correlated electrical and elastic coupling that elicit fast and efficient collective switching. Designing domain structures with advantageous properties is difficult because the mechanisms involved in collective switching are poorly understood and difficult to investigate. Collective switching is a hierarchical process where the nano‐ and mesoscale responses control the macroscopic properties. Using chemical solution synthesis, epitaxially nearly‐relaxed (100) BaTiO 3 films are synthesized. Thermal strain induces a strongly‐correlated domain structure with alternating domains of polarization along the [010] and [001] in‐plane axes and 90° domain walls along the [011] or [01] directions. Simultaneous capacitance–voltage measurements and band‐excitation piezoresponse force microscopy revealed strong collective switching behavior. Using a deep convolutional autoencoder, hierarchical switching is automatically tracked and the switching pathway is identified. The collective switching velocities are calculated to be ≈500 cm s −1 at 5 V (7 kV cm −1 ), orders‐of‐magnitude faster than expected. These combinations of properties are promising for high‐speed tunable dielectrics and low‐voltage ferroelectric memories and logic.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); European Union (EU)
- Grant/Contract Number:
- DE‐AC02‐07CH11359; AC05-00OR22725; 1839234; 220913; 899987
- OSTI ID:
- 1884365
- Alternate ID(s):
- OSTI ID: 1885355; OSTI ID: 1894174
- Journal Information:
- Advanced Science, Journal Name: Advanced Science Vol. 9 Journal Issue: 29; ISSN 2198-3844
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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