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Title: Catalyst Composition and Impurity-dependent Kinetics of Nanowire Heteroepitaxy

The mechanisms and kinetics of axial Ge-Si nanowire heteroepitaxial growth based on the tailoring of the Au catalyst composition via Ga alloying are studied by environmental transmission electron microscopy combined with systematic ex-situ CVD calibrations. The morphology of the Ge-Si heterojunction, in particular the extent of a local, asymmetric increase in nanowire diameter, is found to depend on the Ga composition of the catalyst, on the TMGa precursor exposure temperature, and on the presence of dopants. To rationalize the findings, a general nucleation-based model for nanowire heteroepitaxy is established which is anticipated to be relevant to a wide range of material systems and device-enabling heterostructures.
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Publication Date:
OSTI Identifier:
Report Number(s):
47607; KP1704020
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: ACS Nano, 7(9):7689-7697
Research Org:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org:
Country of Publication:
United States
Environmental Molecular Sciences Laboratory