Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography

Gan, Zhaofeng; Perea, Daniel E.; Yoo, Jinkyoung; He, Yang; Colby, Robert J.; Barker, Josh E.; Gu, Meng; Mao, Scott X.; Wang, Chongmin; Picraux, S. T.; Smith, David J.; McCartney, Martha R.

doi:10.1063/1.4962380

Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography

Journal Article · Tue Sep 13 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4962380· OSTI ID:1340784

Gan, Zhaofeng ^[1]; Perea, Daniel E. ^[2]; Yoo, Jinkyoung ^[3]; He, Yang ^[4]; Colby, Robert J. ^[2]; Barker, Josh E. ^[2]; Gu, Meng ^[2]; Mao, Scott X. ^[4]; Wang, Chongmin ^[2]; ^[3]; Smith, David J. ^[1]; McCartney, Martha R. ^[1]

Arizona State Univ., Tempe, AZ (United States)
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Univ. of Pittsburgh, Pittsburgh, PA (United States)

Doped Si-Ge nanowire (NW) heterojunctions were grown using the vapor-liquid-solid method with AuGa and Au catalyst particles. Transmission electron microscopy and off-axis electron holography (EH) were used to characterize the nanostructure and to measure the electrostatic potential profile across the junction resulting from electrically active dopants, while atom-probe tomography (APT) was used to determine the Si, Ge and total (active and inactive) dopant concentration profiles. A comparison of the measured potential profile with simulations indicated that Ga dopants unintentionally introduced during AuGa catalyst growth were electronically inactive despite APT results that showed considerable amounts of Ga in the Si region. 10% P in Ge and 100% B in Si were estimated to be activated, which was corroborated by in situ electron-holography biasing experiments. This combination of EH, APT, in situ biasing and simulations allows a better knowledge and understanding of the electrically active dopant distributions in NWs.

View Accepted Manuscript (DOE)

Research Organization:: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States), Environmental Molecular Sciences Laboratory (EMSL)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-76RL01830

OSTI ID:: 1340784

Alternate ID(s):: OSTI ID: 1324364

Report Number(s):: PNNL-SA--106309; 47607; KP1704020

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 120; ISSN JAPIAU; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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