Mapping Electrostatic Profiles Across Axial p-n Junctions in Si Nanowires using Off-Axis Electron Holography
Si nanowires (NWs) with axial p-n junctions were grown by the vapor-liquid-solid method. Transmission electron microscopy and electron holography were used to characterize the microstructure and electrostatic properties. Measurement of the potential profile showed the presence of a p-n junction with a height of 1.0±0.3V. A Schottky barrier was observed at the end of the NW due to the Au catalyst particle. Comparison with simulations indicated dopant concentrations of 1019cm-3 for donors and 1017cm-3 for acceptors. These results confirm the benefit of combining off-axis electron holography with simulations for determining localized information about the electrically active dopant distributions in nanowire structures.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1114092
- Report Number(s):
- PNNL-SA-98430; 47607; KP1704020
- Journal Information:
- Applied Physics Letters, 103(15):Article No. 153108, Journal Name: Applied Physics Letters, 103(15):Article No. 153108
- Country of Publication:
- United States
- Language:
- English
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