Electronic stopping power for heavy ions in SiC and SiO2
- University of Tennessee, Knoxville (UTK)
- ORNL
- Pacific Northwest National Laboratory (PNNL)
- Luxel Corporation
- Peking University
Accurate information of electronic stopping power is fundamental for broad advances in electronic industry, space exploration, national security, and sustainable energy technologies. The Stopping and Range of Ions in Matter (SRIM) code has been widely applied to predict stopping powers and ion distributions for decades. Recent experimental results have, however, shown considerable errors in the SRIM predictions for stopping of heavy ions in compounds containing light elements, indicating an urgent need to improve current stopping power models. The electronic stopping powers of 35Cl, 80Br, 127I, and 197Au ions are experimentally determined in two important functional materials, SiC and SiO2, from tens to hundreds keV/u based on a single ion technique. By combining with the reciprocity theory, new electronic stopping powers are suggested in a region from 0 to 15 MeV, where large deviations from SRIM predictions are observed. For independent experimental validation of the electronic stopping powers we determined, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) are utilized to measure the depth profiles of implanted Au ions in SiC with energies from 700 keV to 15 MeV. The measured ion distributions from both RBS and SIMS are considerably deeper (up to ~30%) than the predictions from the commercial SRIM code. In comparison, the new electronic stopping power values are utilized in a modified TRIM-85 (the original version of the SRIM) code, M-TRIM, to predict ion distributions, and the results are in good agreement with the experimentally measured ion distributions.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1116477
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 4; ISSN 0021--8979
- Country of Publication:
- United States
- Language:
- English
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