Electronic stopping powers for heavy ions in SiC and SiO{sub 2}

Journal Article · Tue Jan 28 04:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4861642· OSTI ID:22275657

Jin, K.; Xue, H. ^[1]; Weber, W. J. ^[1]; Zhu, Z. ^[2]; Grove, D. A. ^[3]; Xue, J. ^[4]

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1. Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)
2. Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States)
3. Luxel Corporation, Friday Harbor, Washington 98250 (United States)
4. State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China)

Accurate information on electronic stopping power is fundamental for broad advances in materials science, electronic industry, space exploration, and sustainable energy technologies. In the case of slow heavy ions in light targets, current codes and models provide significantly inconsistent predictions, among which the Stopping and Range of Ions in Matter (SRIM) code is the most commonly used one. Experimental evidence, however, has demonstrated considerable errors in the predicted ion and damage profiles based on SRIM stopping powers. In this work, electronic stopping powers for Cl, Br, I, and Au ions are experimentally determined in two important functional materials, SiC and SiO{sub 2}, based on a single ion technique, and new electronic stopping power values are derived over the energy regime from 0 to 15 MeV, where large deviations from the SRIM predictions are observed. As an experimental validation, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) are utilized to measure the depth profiles of implanted Au ions in SiC for energies from 700 keV to 15 MeV. The measured ion distributions by both RBS and SIMS are considerably deeper than the SRIM predictions, but agree well with predictions based on our derived stopping powers.

• OSTI ID: 22275657
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BROMINE IONS
CHLORINE IONS
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
GOLD IONS
IODINE IONS
ION IMPLANTATION
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
RUTHERFORD BACKSCATTERING SPECTROSCOPY
S CODES
SILICON CARBIDES
SILICON OXIDES
STOPPING POWER