Junction Temperature Measurement of IGBTs Using Short Circuit Current
Conference
·
OSTI ID:1055162
- ORNL
In this paper, a method is proposed to measure the junction temperatures of IGBT discrete devices and modules using short circuit current. Experimental results show that the short circuit current has good sensitivity, linearity and selectivity, which is suitable to be used as temperature sensitive electrical parameters (TSEP). Test circuit and hardware design are proposed for junction temperature measurement in single phase and three phase convertes. By connecting a temperature measurement unit to the converter and giving a short circuit pulse, the IGBT junction temperature can be measured.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1055162
- Resource Relation:
- Conference: IEEE Energy Conversion Congress and Exposition, Raleigh, NC, USA, 20120916, 20120920
- Country of Publication:
- United States
- Language:
- English
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