Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20 um SiGe heterojunction bipolar transistors and circuits.

Journal Article · Mon Sep 01 00:00:00 EDT 2003 · Proposed for publication in the IEEE Transactions on Nuclear Science.

OSTI ID:1005428

Fritz, Karl ^[1]; Irwin, Timothy J ^[2]; Niu, Guofu ^[3]; Fodness, Bryan ^[4]; Carts, Martin A ^[5]; Marshall, Paul W ^[6]; Reed, Robert A ^[7]; Gilbert, Barry ^[1]; Randall, Barbara ^[1]; Prairie, Jason ^[1]; Riggs, Pam ^[1]; Pickel, James C ^[8]; LaBel, Kenneth ^[7]; Cressler, John D ^[9]; Krithivasan, Ramkumar ^[9]; Dodd, Paul Emerson; Vizkelethy, Gyorgy

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1. Mayo Foundation, Rochester, MN
2. Jackson & Tull Chartered Engineers, Washington, DC
3. Auburn University, Auburn, AL
4. SGT, Inc., Greenbelt, MD
5. Raytheon ITSS, Greenbelt, MD
6. Brookneal, VA
7. NASA/GSFC, Greenbelt, MD
8. PR&T, Inc., Fallbrook, CA
9. Georgia Institute of Technology, Atlanta, GA

Combining broad-beam circuit level single-event upset (SEU) response with heavy ion microprobe charge collection measurements on single silicon-germanium heterojunction bipolar transistors improves understanding of the charge collection mechanisms responsible for SEU response of digital SiGe HBT technology. This new understanding of the SEU mechanisms shows that the right rectangular parallele-piped model for the sensitive volume is not applicable to this technology. A new first-order physical model is proposed and calibrated with moderate success.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1005428
• Report Number(s): SAND2003-3381J; IETNAE; TRN: US1101132
• Journal Information: Proposed for publication in the IEEE Transactions on Nuclear Science., Vol. 50, Issue 6; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
CHARGE COLLECTION
HEAVY IONS
HETEROJUNCTIONS
TRANSISTORS