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Title: Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV

Abstract

The performance of overall solar water splitting has been largely limited by the half-reaction of water oxidation. Here, we report a 1.7 eV bandgap InGaN nanowire photoanode for efficient solar water oxidation. It produces a low onset potential of 0.1 V versus a reversible hydrogen electrode (RHE) and a high photocurrent density of 5.2 mA/cm2 at a potential as low as 0.6 V versus RHE. The photoanode yields a half-cell solar energy conversion efficiency up to 3.6%, a record for a single-photon photoanode to our knowledge. Furthermore, in the presence of hole scavengers, the photocurrent density of the InGaN photoanode reaches 21.2 mA/cm2 at 1.23 V versus RHE, which approaches the theoretical limit for a 1.7 eV InGaN absorber. Furthermore, the InGaN nanowire photoanode may serve as an ideal top cell in a photoelectrochemical tandem device when stacked with a 0.9–1.2 eV bandgap bottom cell, which can potentially deliver solar-to-hydrogen efficiency over 25%.

Authors:
ORCiD logo [1];  [2];  [1];  [3];  [3];  [1];  [3];  [1];  [1];  [2]
+ Show Author Affiliations
  1. McGill University, Quebec (Canada)
  2. McGill University, Quebec (Canada); University of Michigan, Ann Arbor, MI (United States)
  3. University of Michigan, Ann Arbor, MI (United States)
Publication Date:
Research Org.:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1984375
Grant/Contract Number:  
EE0008086; SC0011385
Resource Type:
Accepted Manuscript
Journal Name:
ACS Energy Letters
Additional Journal Information:
Journal Volume: 3; Journal Issue: 2; Journal ID: ISSN 2380-8195
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Electrical conductivity; Nanowires; Oxides; Photonics; Water oxidation

Citation Formats

Chu, Sheng, Vanka, Srinivas, Wang, Yichen, Gim, Jiseok, Wang, Yongjie, Ra, Yong-Ho, Hovden, Robert, Guo, Hong, Shih, Ishiang, and Mi, Zetian. Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV. United States: N. p., 2018. Web. doi:10.1021/acsenergylett.7b01138.
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Chu, Sheng, Vanka, Srinivas, Wang, Yichen, Gim, Jiseok, Wang, Yongjie, Ra, Yong-Ho, Hovden, Robert, Guo, Hong, Shih, Ishiang, & Mi, Zetian. Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV. United States. https://doi.org/10.1021/acsenergylett.7b01138
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Chu, Sheng, Vanka, Srinivas, Wang, Yichen, Gim, Jiseok, Wang, Yongjie, Ra, Yong-Ho, Hovden, Robert, Guo, Hong, Shih, Ishiang, and Mi, Zetian. Tue . "Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV". United States. https://doi.org/10.1021/acsenergylett.7b01138. https://www.osti.gov/servlets/purl/1984375.
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@article{osti_1984375,
title = {Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV},
author = {Chu, Sheng and Vanka, Srinivas and Wang, Yichen and Gim, Jiseok and Wang, Yongjie and Ra, Yong-Ho and Hovden, Robert and Guo, Hong and Shih, Ishiang and Mi, Zetian},
abstractNote = {The performance of overall solar water splitting has been largely limited by the half-reaction of water oxidation. Here, we report a 1.7 eV bandgap InGaN nanowire photoanode for efficient solar water oxidation. It produces a low onset potential of 0.1 V versus a reversible hydrogen electrode (RHE) and a high photocurrent density of 5.2 mA/cm2 at a potential as low as 0.6 V versus RHE. The photoanode yields a half-cell solar energy conversion efficiency up to 3.6%, a record for a single-photon photoanode to our knowledge. Furthermore, in the presence of hole scavengers, the photocurrent density of the InGaN photoanode reaches 21.2 mA/cm2 at 1.23 V versus RHE, which approaches the theoretical limit for a 1.7 eV InGaN absorber. Furthermore, the InGaN nanowire photoanode may serve as an ideal top cell in a photoelectrochemical tandem device when stacked with a 0.9–1.2 eV bandgap bottom cell, which can potentially deliver solar-to-hydrogen efficiency over 25%.},
doi = {10.1021/acsenergylett.7b01138},
journal = {ACS Energy Letters},
number = 2,
volume = 3,
place = {United States},
year = {Tue Jan 02 00:00:00 EST 2018},
month = {Tue Jan 02 00:00:00 EST 2018}
}
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https://doi.org/10.1021/acsenergylett.7b01138
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