DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: A Josephson junction with h-BN tunnel barrier: observation of low critical current noise

Abstract

Decoherence in quantum bits (qubits) is a major challenge for realizing scalable quantum computing. One of the primary causes of decoherence in qubits and quantum circuits based on superconductor Josephson junctions is the critical current fluctuation. Many efforts have been devoted to suppressing the critical current fluctuation in Josephson junctions. Nonetheless, the efforts have been hindered by the defect-induced trapping states in oxide-based tunnel barriers and the interfaces with superconductors in the traditional Josephson junctions. Motivated by this and also the recent demonstration of 2D insulator h-BN with exceptional crystallinity and low defect density, we fabricated a vertical NbSe2/h-BN/Nb Josephson junction consisting of a bottom NbSe2 superconductor thin layer and a top Nb superconductor spaced by an atomically thin h-BN layer. We further characterized the superconducting current and voltage (I-V) relationships and Fraunhofer pattern of the NbSe2/h-BN/Nb junction. Notably, we demonstrated the critical current noise (1/f noise power) in the h-BN-based Josephson device is at least a factor of four lower than that of the previously studied Aluminum oxide-based Josephson junctions. Our work offers a strong promise of h-BN as a novel tunnel barrier for high-quality Josephson junctions and qubit applications.

Authors:
ORCiD logo [1];  [2];  [3]; ORCiD logo [4];  [4]; ORCiD logo [3]; ORCiD logo [5]
  1. Purdue Univ., West Lafayette, IN (United States); Univ. of Wyoming, Laramie, WY (United States); National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
  2. Purdue Univ., West Lafayette, IN (United States); Univ. of California, Irvine, CA (United States)
  3. Univ. of Wisconsin, Madison, WI (United States)
  4. National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
  5. Purdue Univ., West Lafayette, IN (United States); Aarhus Univ. (Denmark); Tohoku Univ., Sendai (Japan)
Publication Date:
Research Org.:
Univ. of Wyoming, Laramie, WY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1979277
Alternate Identifier(s):
OSTI ID: 2335857
Grant/Contract Number:  
SC0021281
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Physics. Condensed Matter
Additional Journal Information:
Journal Volume: 33; Journal Issue: 49; Journal ID: ISSN 0953-8984
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Josephson junctions; boron nitride; critical current noise

Citation Formats

Tian, Jifa, Jauregui, Luis A., Wilen, C. D., Rigosi, Albert F., Newell, David B., McDermott, R., and Chen, Yong P. A Josephson junction with h-BN tunnel barrier: observation of low critical current noise. United States: N. p., 2021. Web. doi:10.1088/1361-648x/ac268f.
Tian, Jifa, Jauregui, Luis A., Wilen, C. D., Rigosi, Albert F., Newell, David B., McDermott, R., & Chen, Yong P. A Josephson junction with h-BN tunnel barrier: observation of low critical current noise. United States. https://doi.org/10.1088/1361-648x/ac268f
Tian, Jifa, Jauregui, Luis A., Wilen, C. D., Rigosi, Albert F., Newell, David B., McDermott, R., and Chen, Yong P. Fri . "A Josephson junction with h-BN tunnel barrier: observation of low critical current noise". United States. https://doi.org/10.1088/1361-648x/ac268f. https://www.osti.gov/servlets/purl/1979277.
@article{osti_1979277,
title = {A Josephson junction with h-BN tunnel barrier: observation of low critical current noise},
author = {Tian, Jifa and Jauregui, Luis A. and Wilen, C. D. and Rigosi, Albert F. and Newell, David B. and McDermott, R. and Chen, Yong P.},
abstractNote = {Decoherence in quantum bits (qubits) is a major challenge for realizing scalable quantum computing. One of the primary causes of decoherence in qubits and quantum circuits based on superconductor Josephson junctions is the critical current fluctuation. Many efforts have been devoted to suppressing the critical current fluctuation in Josephson junctions. Nonetheless, the efforts have been hindered by the defect-induced trapping states in oxide-based tunnel barriers and the interfaces with superconductors in the traditional Josephson junctions. Motivated by this and also the recent demonstration of 2D insulator h-BN with exceptional crystallinity and low defect density, we fabricated a vertical NbSe2/h-BN/Nb Josephson junction consisting of a bottom NbSe2 superconductor thin layer and a top Nb superconductor spaced by an atomically thin h-BN layer. We further characterized the superconducting current and voltage (I-V) relationships and Fraunhofer pattern of the NbSe2/h-BN/Nb junction. Notably, we demonstrated the critical current noise (1/f noise power) in the h-BN-based Josephson device is at least a factor of four lower than that of the previously studied Aluminum oxide-based Josephson junctions. Our work offers a strong promise of h-BN as a novel tunnel barrier for high-quality Josephson junctions and qubit applications.},
doi = {10.1088/1361-648x/ac268f},
journal = {Journal of Physics. Condensed Matter},
number = 49,
volume = 33,
place = {United States},
year = {Fri Oct 01 00:00:00 EDT 2021},
month = {Fri Oct 01 00:00:00 EDT 2021}
}

Works referenced in this record:

Superconducting quantum bits
journal, June 2008


Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
journal, February 2012

  • Britnell, Liam; Gorbachev, Roman V.; Jalil, Rashid
  • Nano Letters, Vol. 12, Issue 3
  • DOI: 10.1021/nl3002205

Large-scale fabrication of BN tunnel barriers for graphene spintronics
journal, August 2014

  • Fu, Wangyang; Makk, Péter; Maurand, Romain
  • Journal of Applied Physics, Vol. 116, Issue 7
  • DOI: 10.1063/1.4893578

Materials Origins of Decoherence in Superconducting Qubits
journal, February 2009


Measurements of 1∕f noise in Josephson junctions at zero voltage: Implications for decoherence in superconducting quantum bits
journal, January 2005

  • Mück, Michael; Korn, Matthias; Mugford, C. G. A.
  • Applied Physics Letters, Vol. 86, Issue 1
  • DOI: 10.1063/1.1846157

Strongly enhanced charge-density-wave order in monolayer NbSe2
journal, July 2015

  • Xi, Xiaoxiang; Zhao, Liang; Wang, Zefang
  • Nature Nanotechnology, Vol. 10, Issue 9, p. 765-769
  • DOI: 10.1038/nnano.2015.143

Electric Field Effect in Atomically Thin Carbon Films
journal, October 2004


Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride
journal, August 2014

  • Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep06146

Nb/Al/AlOx/AlOx/Al/Nb Josephson junctions for programmable voltage standards
journal, August 1998

  • Schulze, H.; Behr, R.; Müller, F.
  • Applied Physics Letters, Vol. 73, Issue 7
  • DOI: 10.1063/1.122064

Noise and microresonance of critical current in Josephson junction induced by Kondo trap states
journal, December 2011


Materials in superconducting quantum bits
journal, October 2013


Low-frequency noise in Josephson junctions for superconducting qubits
journal, September 2006

  • Eroms, J.; van Schaarenburg, L. C.; Driessen, E. F. C.
  • Applied Physics Letters, Vol. 89, Issue 12
  • DOI: 10.1063/1.2357010

Decoherence in Josephson-junction qubits due to critical-current fluctuations
journal, August 2004


Supercurrent in van der Waals Josephson junction
journal, February 2016

  • Yabuki, Naoto; Moriya, Rai; Arai, Miho
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms10616

Tunnel magnetoresistance with atomically thin two-dimensional hexagonal boron nitride barriers
journal, November 2014


Two-Dimensional Material Tunnel Barrier for Josephson Junctions and Superconducting Qubits
journal, October 2019


2D materials and van der Waals heterostructures
journal, July 2016


Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
journal, April 2014


Low frequency resistance and critical current fluctuations in Al-based Josephson junctions
journal, April 2013

  • Nugroho, C. D.; Orlyanchik, V.; Van Harlingen, D. J.
  • Applied Physics Letters, Vol. 102, Issue 14
  • DOI: 10.1063/1.4801521

Direct observation of the thickness distribution of ultra thin AlO x barriers in Al/AlO x /Al Josephson junctions
journal, September 2015


Boron nitride substrates for high-quality graphene electronics
journal, August 2010

  • Dean, C. R.; Young, A. F.; Meric, I.
  • Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726
  • DOI: 10.1038/nnano.2010.172

Black phosphorus field-effect transistors
journal, March 2014


Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

High-quality in situ fabricated Nb Josephson junctions with black phosphorus barriers
journal, September 2019

  • Chen, Wei; Xu, Zuyu; Tian, Wanghao
  • Superconductor Science and Technology, Vol. 32, Issue 11
  • DOI: 10.1088/1361-6668/ab3dc7