Colloquium: Quantum anomalous Hall effect
Abstract
The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators—topologically nontrivial states of two-dimensional matter with broken time-reversal symmetry. In Chern insulators, nontrivial bulk band topology is expressed by chiral states that carry current along sample edges without dissipation. Here, the quantum anomalous Hall (QAH) effect refers to QH effects that occur in the absence of external magnetic fields due to spontaneously broken time-reversal symmetry. The QAH effect has now been realized in four different classes of two-dimensional materials: (i) thin films of magnetically (Cr- and/or V-) doped topological insulators in the (Bi,Sb)2T3 family, (ii) thin films of the intrinsic magnetic topological insulator MnBi2Te4, (iii) moiré materials formed from graphene, and (iv) moiré materials formed from transition-metal dichalcogenides. In this Colloquium, the physical mechanisms responsible for each class of QAH insulator are reviewed, with both differences and commonalities highlighted, and potential applications of the QAH effect are commented upon.
- Authors:
-
[1];
- Pennsylvania State Univ., University Park, PA (United States)
- Univ. of Texas, Austin, TX (United States)
- Publication Date:
- Research Org.:
- Univ. of Texas, Austin, TX (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Army Research Office (ARO); NSF-MRSEC; US Air Force Office of Scientific Research (AFOSR); Gordon and Betty Moore Foundation’s EPiQS Initiative
- OSTI Identifier:
- 1968228
- Alternate Identifier(s):
- OSTI ID: 1968946
- Grant/Contract Number:
- SC0022106; SC0023113; SC0019064; SC0019481; DMR-2011839; DMR-2011750; W911NF1810198; W911NF2210159; FA9550-21-1-0177; GBMF9063; DMR-1847811
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Reviews of Modern Physics
- Additional Journal Information:
- Journal Volume: 95; Journal Issue: 1; Journal ID: ISSN 0034-6861
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Quantum anomalous Hall effect
Citation Formats
Chang, Cui-Zu, Liu, Chao-Xing, and MacDonald, Allan H. Colloquium: Quantum anomalous Hall effect. United States: N. p., 2023.
Web. doi:10.1103/revmodphys.95.011002.
Chang, Cui-Zu, Liu, Chao-Xing, & MacDonald, Allan H. Colloquium: Quantum anomalous Hall effect. United States. https://doi.org/10.1103/revmodphys.95.011002
Chang, Cui-Zu, Liu, Chao-Xing, and MacDonald, Allan H. Mon .
"Colloquium: Quantum anomalous Hall effect". United States. https://doi.org/10.1103/revmodphys.95.011002. https://www.osti.gov/servlets/purl/1968228.
@article{osti_1968228,
title = {Colloquium: Quantum anomalous Hall effect},
author = {Chang, Cui-Zu and Liu, Chao-Xing and MacDonald, Allan H.},
abstractNote = {The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators—topologically nontrivial states of two-dimensional matter with broken time-reversal symmetry. In Chern insulators, nontrivial bulk band topology is expressed by chiral states that carry current along sample edges without dissipation. Here, the quantum anomalous Hall (QAH) effect refers to QH effects that occur in the absence of external magnetic fields due to spontaneously broken time-reversal symmetry. The QAH effect has now been realized in four different classes of two-dimensional materials: (i) thin films of magnetically (Cr- and/or V-) doped topological insulators in the (Bi,Sb)2T3 family, (ii) thin films of the intrinsic magnetic topological insulator MnBi2Te4, (iii) moiré materials formed from graphene, and (iv) moiré materials formed from transition-metal dichalcogenides. In this Colloquium, the physical mechanisms responsible for each class of QAH insulator are reviewed, with both differences and commonalities highlighted, and potential applications of the QAH effect are commented upon.},
doi = {10.1103/revmodphys.95.011002},
journal = {Reviews of Modern Physics},
number = 1,
volume = 95,
place = {United States},
year = {Mon Jan 23 00:00:00 EST 2023},
month = {Mon Jan 23 00:00:00 EST 2023}
}
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