Demonstration of the DC-Kerr effect in silicon-rich nitride
Abstract
We demonstrate the DC-Kerr effect in plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility, , as high as . We employ spectral shift versus applied voltage measurements in a racetrack resonator as a tool to characterize the nonlinear susceptibilities of these films. In doing so, we demonstrate a larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase shifters while maintaining a low thermal budget using a deposition technique readily available in CMOS process flows.
- Authors:
-
- Univ. of California, San Diego, La Jolla, CA (United States)
- Publication Date:
- Research Org.:
- Univ. of California, San Diego, La Jolla, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC); Cymer; Advanced Research Projects Agency–Energy; National Science Foundation (NSF); San Diego Nanotechnology Infrastructure; Army Research Office (ARO); US Department of the Navy, Office of Naval Research (ONR); USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1852990
- Alternate Identifier(s):
- OSTI ID: 1814662
- Grant/Contract Number:
- SC0019273; CBET-1704085; ECCS-2025752; ECCS-1542148; ECCS-180789; ECCS-190184: ECCS-2023730; DMR-1707641; ECCS-2025752ECCS-1542148
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Optics Letters
- Additional Journal Information:
- Journal Volume: 46; Journal Issue: 17; Journal ID: ISSN 0146-9592
- Publisher:
- Optical Society of America (OSA)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; optics
Citation Formats
Friedman, Alex, Nejadriahi, Hani, Sharma, Rajat, and Fainman, Yeshaiahu. Demonstration of the DC-Kerr effect in silicon-rich nitride. United States: N. p., 2021.
Web. doi:10.1364/ol.432359.
Friedman, Alex, Nejadriahi, Hani, Sharma, Rajat, & Fainman, Yeshaiahu. Demonstration of the DC-Kerr effect in silicon-rich nitride. United States. https://doi.org/10.1364/ol.432359
Friedman, Alex, Nejadriahi, Hani, Sharma, Rajat, and Fainman, Yeshaiahu. Wed .
"Demonstration of the DC-Kerr effect in silicon-rich nitride". United States. https://doi.org/10.1364/ol.432359. https://www.osti.gov/servlets/purl/1852990.
@article{osti_1852990,
title = {Demonstration of the DC-Kerr effect in silicon-rich nitride},
author = {Friedman, Alex and Nejadriahi, Hani and Sharma, Rajat and Fainman, Yeshaiahu},
abstractNote = {We demonstrate the DC-Kerr effect in plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility, χ <#comment/> ( 3 ) , as high as ( 6 ± <#comment/> 0.58 ) × <#comment/> 10 − <#comment/> 19 m 2 / V 2 . We employ spectral shift versus applied voltage measurements in a racetrack resonator as a tool to characterize the nonlinear susceptibilities of these films. In doing so, we demonstrate a χ <#comment/> ( 3 ) larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase shifters while maintaining a low thermal budget using a deposition technique readily available in CMOS process flows.},
doi = {10.1364/ol.432359},
journal = {Optics Letters},
number = 17,
volume = 46,
place = {United States},
year = {Wed Aug 25 00:00:00 EDT 2021},
month = {Wed Aug 25 00:00:00 EDT 2021}
}
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