A tunable band gap of the layered semiconductor Zn3In2S6 under pressure
Abstract
The band gap is an important property of a semiconductor, and a candidate material with a highly tunable band gap under external tuning parameters will offer wider applications in optoelectronic devices and photocatalytic fields. Here, we show that the layered semiconductor Zn3In2S6 possesses a band gap that is highly tunable with pressure. In situ optical absorption shows that the band gap unexpectedly widens with pressure up to ~13 GPa. Sudden gap narrowing then occurs above 14 GPa, which is followed by progressive gap decreases on further compression and the gap finally closes above 20 GPa. Our study, encompassing X-ray diffraction, Raman spectroscopy experiments and theoretical calculations revealed that the selective responses of the different bonds are responsible for the band gap increase in the low-pressure ranges. We show that the pressure-induced irreversible amorphization is responsible for the sudden gap narrowing whereas the semiconductor–metallic transition is related to the amorphous–amorphous transition at high-pressure due to a change in the local coordination number of Zn atoms. This work demonstrates the high tunability of the electronic and optical properties of layered ternary semiconductors under pressure, providing a potential way for wider applications of this class of materials.
- Authors:
-
[1];
[2];
[3];
[4];
[2];
- Center for High Pressure Science and Technology Advanced Research, Shanghai (China)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Vytautas Magnus Univ., Kaunas (Lithuania)
- Kunsan National Univ., Gunsan (South Korea)
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC)
- OSTI Identifier:
- 1846023
- Report Number(s):
- BNL-222768-2022-JAAM
Journal ID: ISSN 2050-7526; TRN: US2302503
- Grant/Contract Number:
- SC0012704; U1530402; 1181153000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Materials Chemistry C
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 5; Journal ID: ISSN 2050-7526
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Susilo, Resta A., Liu, Yu, Sheng, Hongwei, Dong, Hongliang, Sereika, Raimundas, Kim, Bongjae, Hu, Zhixiang, Li, Shujia, Yuan, Mingzhi, Petrovic, Cedomir, and Chen, Bin. A tunable band gap of the layered semiconductor Zn3In2S6 under pressure. United States: N. p., 2021.
Web. doi:10.1039/d1tc05098b.
Susilo, Resta A., Liu, Yu, Sheng, Hongwei, Dong, Hongliang, Sereika, Raimundas, Kim, Bongjae, Hu, Zhixiang, Li, Shujia, Yuan, Mingzhi, Petrovic, Cedomir, & Chen, Bin. A tunable band gap of the layered semiconductor Zn3In2S6 under pressure. United States. https://doi.org/10.1039/d1tc05098b
Susilo, Resta A., Liu, Yu, Sheng, Hongwei, Dong, Hongliang, Sereika, Raimundas, Kim, Bongjae, Hu, Zhixiang, Li, Shujia, Yuan, Mingzhi, Petrovic, Cedomir, and Chen, Bin. Thu .
"A tunable band gap of the layered semiconductor Zn3In2S6 under pressure". United States. https://doi.org/10.1039/d1tc05098b. https://www.osti.gov/servlets/purl/1846023.
@article{osti_1846023,
title = {A tunable band gap of the layered semiconductor Zn3In2S6 under pressure},
author = {Susilo, Resta A. and Liu, Yu and Sheng, Hongwei and Dong, Hongliang and Sereika, Raimundas and Kim, Bongjae and Hu, Zhixiang and Li, Shujia and Yuan, Mingzhi and Petrovic, Cedomir and Chen, Bin},
abstractNote = {The band gap is an important property of a semiconductor, and a candidate material with a highly tunable band gap under external tuning parameters will offer wider applications in optoelectronic devices and photocatalytic fields. Here, we show that the layered semiconductor Zn3In2S6 possesses a band gap that is highly tunable with pressure. In situ optical absorption shows that the band gap unexpectedly widens with pressure up to ~13 GPa. Sudden gap narrowing then occurs above 14 GPa, which is followed by progressive gap decreases on further compression and the gap finally closes above 20 GPa. Our study, encompassing X-ray diffraction, Raman spectroscopy experiments and theoretical calculations revealed that the selective responses of the different bonds are responsible for the band gap increase in the low-pressure ranges. We show that the pressure-induced irreversible amorphization is responsible for the sudden gap narrowing whereas the semiconductor–metallic transition is related to the amorphous–amorphous transition at high-pressure due to a change in the local coordination number of Zn atoms. This work demonstrates the high tunability of the electronic and optical properties of layered ternary semiconductors under pressure, providing a potential way for wider applications of this class of materials.},
doi = {10.1039/d1tc05098b},
journal = {Journal of Materials Chemistry C},
number = 5,
volume = 10,
place = {United States},
year = {Thu Dec 23 00:00:00 EST 2021},
month = {Thu Dec 23 00:00:00 EST 2021}
}
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