Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide
Abstract
The interplay of stress, disorder, and Coulomb screening dictating the mobility of doped cadmium oxide (CdO) is examined using Raman spectroscopy to identify the mechanisms driving dopant incorporation and scattering within this emerging infrared optical material. Specifically, multi-wavelength Raman and UV-vis spectroscopies are combined with electrical Hall measurements on a series of yttrium (X = Y) and indium (X = In) doped X:CdO thin-films. Hall measurements confirm n-type doping and establish carrier concentrations and mobilities. Spectral fitting along the low-frequency Raman combination bands, especially the TA+TO(X) mode, reveals that the evolution of strain and disorder within the lattice as a function of dopant concentration is strongly correlated with mobility. Coupling between the electronic and lattice environments was examined through analysis of first- and second-order longitudinal–optical phonon–plasmon coupled modes that monotonically decrease in energy and asymmetrically broaden with increasing dopant concentration. By fitting these trends to an impurity-induced Fröhlich model for the Raman scattering intensity, exciton–phonon and exciton–impurity coupling factors are quantified. These coupling factors indicate a continual decrease in the amount of ionized impurity scattering with increasing dopant concentration and are not as well correlated with mobility. This shows that lattice strain and disorder are the primary determining factors for mobility in donor-doped CdO.more »
- Authors:
-
[1];
[2];
[3];
[1];
[4];
[5];
[6]
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- DEVCOM US Army Research Laboratory, Research Triangle Park, NC (United States)
- Pennsylvania State Univ., University Park, PA (United States)
- Univ. of Virginia, Charlottesville, VA (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Purdue Univ., West Lafayette, IN (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program; US Department of the Navy, Office of Naval Research (ONR)
- OSTI Identifier:
- 1834104
- Alternate Identifier(s):
- OSTI ID: 1831316
- Report Number(s):
- SAND-2021-14754J
Journal ID: ISSN 0021-8979; 701852; TRN: US2300520
- Grant/Contract Number:
- NA0003525; N00012-18-1-2107; NA-0003525
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 130; Journal Issue: 19; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; plasmons; doping; electronic transport; excitons; transition metals; phonons; hall effect; lattice scattering; oxides; Raman spectroscopy
Citation Formats
Piontkowski, Zachary T., Runnerstrom, Evan L., Cleri, Angela, McDonald, Anthony, Ihlefeld, Jon, Saltonstall, Christopher, Maria, Jon-Paul, and Beechem, Thomas E. Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide. United States: N. p., 2021.
Web. doi:10.1063/5.0073345.
Piontkowski, Zachary T., Runnerstrom, Evan L., Cleri, Angela, McDonald, Anthony, Ihlefeld, Jon, Saltonstall, Christopher, Maria, Jon-Paul, & Beechem, Thomas E. Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide. United States. https://doi.org/10.1063/5.0073345
Piontkowski, Zachary T., Runnerstrom, Evan L., Cleri, Angela, McDonald, Anthony, Ihlefeld, Jon, Saltonstall, Christopher, Maria, Jon-Paul, and Beechem, Thomas E. Thu .
"Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide". United States. https://doi.org/10.1063/5.0073345. https://www.osti.gov/servlets/purl/1834104.
@article{osti_1834104,
title = {Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide},
author = {Piontkowski, Zachary T. and Runnerstrom, Evan L. and Cleri, Angela and McDonald, Anthony and Ihlefeld, Jon and Saltonstall, Christopher and Maria, Jon-Paul and Beechem, Thomas E.},
abstractNote = {The interplay of stress, disorder, and Coulomb screening dictating the mobility of doped cadmium oxide (CdO) is examined using Raman spectroscopy to identify the mechanisms driving dopant incorporation and scattering within this emerging infrared optical material. Specifically, multi-wavelength Raman and UV-vis spectroscopies are combined with electrical Hall measurements on a series of yttrium (X = Y) and indium (X = In) doped X:CdO thin-films. Hall measurements confirm n-type doping and establish carrier concentrations and mobilities. Spectral fitting along the low-frequency Raman combination bands, especially the TA+TO(X) mode, reveals that the evolution of strain and disorder within the lattice as a function of dopant concentration is strongly correlated with mobility. Coupling between the electronic and lattice environments was examined through analysis of first- and second-order longitudinal–optical phonon–plasmon coupled modes that monotonically decrease in energy and asymmetrically broaden with increasing dopant concentration. By fitting these trends to an impurity-induced Fröhlich model for the Raman scattering intensity, exciton–phonon and exciton–impurity coupling factors are quantified. These coupling factors indicate a continual decrease in the amount of ionized impurity scattering with increasing dopant concentration and are not as well correlated with mobility. This shows that lattice strain and disorder are the primary determining factors for mobility in donor-doped CdO. In aggregate, the study confirms previously postulated defect equilibrium arguments for dopant incorporation in CdO while at the same time identifying paths for its further refinement.},
doi = {10.1063/5.0073345},
journal = {Journal of Applied Physics},
number = 19,
volume = 130,
place = {United States},
year = {Thu Nov 18 00:00:00 EST 2021},
month = {Thu Nov 18 00:00:00 EST 2021}
}
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