Interface Carriers and Enhanced Electron-Phonon Coupling Effect in Al2O3/TiO2 Heterostructure Revealed by Resonant Inelastic Soft X-Ray Scattering
Abstract
The electronic structure and the electron-phonon couplings in a novel mass-production-compatible Al2O3/TiO2 2D electron system (2DES) are investigated using resonant inelastic soft X-ray scattering. The experimental data from the samples of various TiO2 thicknesses unequivocally show that the Ti3+ state indeed exists at the deep interface to serve as an n-type dopant for the 2DES. Here, the electronic structure of Ti3+ species is scrutinized as entirely separated from that of the Ti4+ host lattice. Furthermore, features of sub-eV energy loss phonon modes are clearly observed, indicating substantial electron-phonon coupling effects. Such low energy loss features are enhanced in thinner TiO2 samples, implying that polaronic local lattice deformation is enhanced due to the presence of Ti3+. These findings suggest that the 2DES properties can be controlled via well-established TiO2 engineering, thereby enthroning the binary oxide heterostructure as a promising candidate for 2DES device applications.
- Authors:
-
[2];
[1];
[1];
[3];
[4]
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
- Hanyang Univ., Ansan (Korea)
- Jeonbuk National Univ., Jeonju (Korea)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Basic Science Research Program
- OSTI Identifier:
- 1807543
- Alternate Identifier(s):
- OSTI ID: 1797842; OSTI ID: 1804881
- Grant/Contract Number:
- AC02-05CH11231; AC02-76SF00515; 2018R1D1A1B07043427
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Functional Materials
- Additional Journal Information:
- Journal Volume: 31; Journal Issue: 35; Journal ID: ISSN 1616-301X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 2D electron gas; aluminum oxide; dd excitation; electron-phonon coupling; oxide heterostructures; resonant inelastic X-ray scattering; titanium oxide
Citation Formats
Shao, Yu‐Cheng, Kuo, Cheng‐Tai, Feng, Xuefei, Chuang, Yi‐De, Seok, Tae Jun, Choi, Ji Hyeon, Park, Tae Joo, and Cho, Deok‐Yong. Interface Carriers and Enhanced Electron-Phonon Coupling Effect in Al2O3/TiO2 Heterostructure Revealed by Resonant Inelastic Soft X-Ray Scattering. United States: N. p., 2021.
Web. doi:10.1002/adfm.202104430.
Shao, Yu‐Cheng, Kuo, Cheng‐Tai, Feng, Xuefei, Chuang, Yi‐De, Seok, Tae Jun, Choi, Ji Hyeon, Park, Tae Joo, & Cho, Deok‐Yong. Interface Carriers and Enhanced Electron-Phonon Coupling Effect in Al2O3/TiO2 Heterostructure Revealed by Resonant Inelastic Soft X-Ray Scattering. United States. https://doi.org/10.1002/adfm.202104430
Shao, Yu‐Cheng, Kuo, Cheng‐Tai, Feng, Xuefei, Chuang, Yi‐De, Seok, Tae Jun, Choi, Ji Hyeon, Park, Tae Joo, and Cho, Deok‐Yong. Sun .
"Interface Carriers and Enhanced Electron-Phonon Coupling Effect in Al2O3/TiO2 Heterostructure Revealed by Resonant Inelastic Soft X-Ray Scattering". United States. https://doi.org/10.1002/adfm.202104430. https://www.osti.gov/servlets/purl/1807543.
@article{osti_1807543,
title = {Interface Carriers and Enhanced Electron-Phonon Coupling Effect in Al2O3/TiO2 Heterostructure Revealed by Resonant Inelastic Soft X-Ray Scattering},
author = {Shao, Yu‐Cheng and Kuo, Cheng‐Tai and Feng, Xuefei and Chuang, Yi‐De and Seok, Tae Jun and Choi, Ji Hyeon and Park, Tae Joo and Cho, Deok‐Yong},
abstractNote = {The electronic structure and the electron-phonon couplings in a novel mass-production-compatible Al2O3/TiO2 2D electron system (2DES) are investigated using resonant inelastic soft X-ray scattering. The experimental data from the samples of various TiO2 thicknesses unequivocally show that the Ti3+ state indeed exists at the deep interface to serve as an n-type dopant for the 2DES. Here, the electronic structure of Ti3+ species is scrutinized as entirely separated from that of the Ti4+ host lattice. Furthermore, features of sub-eV energy loss phonon modes are clearly observed, indicating substantial electron-phonon coupling effects. Such low energy loss features are enhanced in thinner TiO2 samples, implying that polaronic local lattice deformation is enhanced due to the presence of Ti3+. These findings suggest that the 2DES properties can be controlled via well-established TiO2 engineering, thereby enthroning the binary oxide heterostructure as a promising candidate for 2DES device applications.},
doi = {10.1002/adfm.202104430},
journal = {Advanced Functional Materials},
number = 35,
volume = 31,
place = {United States},
year = {Sun Jun 20 00:00:00 EDT 2021},
month = {Sun Jun 20 00:00:00 EDT 2021}
}
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