Strain-dependent luminescence and piezoelectricity in monolayer transition metal dichalcogenides

De Palma, Alex C.; Cossio, Gabriel; Jones, Kayleigh; Quan, Jiamin; Li, Xiaoqin; Yu, Edward T.

doi:10.1116/6.0000251

Title: Strain-dependent luminescence and piezoelectricity in monolayer transition metal dichalcogenides

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Abstract

The modification of optical and electronic properties of transition metal dichalcogenides via mechanical deformation has been widely studied. Their ability to withstand large deformations before rupture has enabled large tunability of the bandgap, and further, the spatially varying strain has been shown to control the spatial distribution of the bandgap and lead to effects such as carrier funneling. Monolayer transition metal dichalcogenides exhibit a significant piezoelectric effect that could couple to a spatially inhomogeneous strain distribution to influence electronic and optical behavior. We investigate both experimentally and theoretically an example case of photoluminescence in structures with a strain distribution similar to that employed in single-photon emitters but generated here via nanoindentation. Using a mechanical model for strain induced by nanoindentation, we show that piezoelectricity can result in charge densities reaching 10¹² e/cm² and can generate electrostatic potential variations on the order of ±0.1 V across the suspended monolayer. We analyze the implications of these results for luminescence and exciton transport in monolayer transition metal dichalcogenides with spatially varying strain.

Authors:

De Palma, Alex C. ^[1]; Cossio, Gabriel ^[1]; Jones, Kayleigh ^[1]; Quan, Jiamin ^[2]; Li, Xiaoqin ^[1]; Yu, Edward T. ^[1]

Univ. of Texas, Austin, TX (United States)
The University of Texas at Austin, Austin, Texas (United States). Dept. of Physics

Publication Date:: Wed Jul 01 00:00:00 EDT 2020

Research Org.:: Univ. of Texas, Austin, TX (United States)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1803787

Alternate Identifier(s):: OSTI ID: 1637387

Grant/Contract Number:: SC0019398

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Vacuum Science and Technology B

Additional Journal Information:: Journal Volume: 38; Journal Issue: 4; Journal ID: ISSN 2166-2746

Publisher:: American Vacuum Society / AIP

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; Engineering; Science & Technology - Other Topics; Physics

Citation Formats


                    De Palma, Alex C., Cossio, Gabriel, Jones, Kayleigh, Quan, Jiamin, Li, Xiaoqin, and Yu, Edward T. Strain-dependent luminescence and piezoelectricity in monolayer transition metal dichalcogenides.  United States: N. p., 2020. 
Web.  doi:10.1116/6.0000251.

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                    De Palma, Alex C., Cossio, Gabriel, Jones, Kayleigh, Quan, Jiamin, Li, Xiaoqin, & Yu, Edward T. Strain-dependent luminescence and piezoelectricity in monolayer transition metal dichalcogenides.  United States.  https://doi.org/10.1116/6.0000251

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                    De Palma, Alex C., Cossio, Gabriel, Jones, Kayleigh, Quan, Jiamin, Li, Xiaoqin, and Yu, Edward T. Wed .  
"Strain-dependent luminescence and piezoelectricity in monolayer transition metal dichalcogenides".  United States.  https://doi.org/10.1116/6.0000251.  https://www.osti.gov/servlets/purl/1803787.

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@article{osti_1803787,

  title        = {Strain-dependent luminescence and piezoelectricity in monolayer transition metal dichalcogenides},

  author       = {De Palma, Alex C. and Cossio, Gabriel and Jones, Kayleigh and Quan, Jiamin and Li, Xiaoqin and Yu, Edward T.},

  abstractNote = {The modification of optical and electronic properties of transition metal dichalcogenides via mechanical deformation has been widely studied. Their ability to withstand large deformations before rupture has enabled large tunability of the bandgap, and further, the spatially varying strain has been shown to control the spatial distribution of the bandgap and lead to effects such as carrier funneling. Monolayer transition metal dichalcogenides exhibit a significant piezoelectric effect that could couple to a spatially inhomogeneous strain distribution to influence electronic and optical behavior. We investigate both experimentally and theoretically an example case of photoluminescence in structures with a strain distribution similar to that employed in single-photon emitters but generated here via nanoindentation. Using a mechanical model for strain induced by nanoindentation, we show that piezoelectricity can result in charge densities reaching 1012 e/cm2 and can generate electrostatic potential variations on the order of ±0.1 V across the suspended monolayer. We analyze the implications of these results for luminescence and exciton transport in monolayer transition metal dichalcogenides with spatially varying strain.},

  doi          = {10.1116/6.0000251},

  journal      = {Journal of Vacuum Science and Technology B},

  number       = 4,

  volume       = 38,

  place        = {United States},

  year         = {Wed Jul 01 00:00:00 EDT 2020},

  month        = {Wed Jul 01 00:00:00 EDT 2020}

}

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