Precise radiative lifetimes in bulk crystals from first principles: the case of wurtzite gallium nitride
Abstract
Gallium nitride (GaN) is a key semiconductor for solid-state lighting, but its radiative processes are not fully understood. Here we show a first-principles approach to accurately compute the radiative lifetimes in bulk uniaxial crystals, focusing on wurtzite GaN. Our computed radiative lifetimes are in very good agreement with experiment up to 100 K. We show that taking into account excitons (through the Bethe–Salpeter equation) and spin–orbit coupling is essential for computing accurate radiative lifetimes. A model for exciton dissociation into free carriers allows us to compute the radiative lifetimes up to room temperature. Our work enables precise radiative lifetime calculations in III-nitrides and other anisotropic solid-state emitters.
- Authors:
-
- California Institute of Technology (CalTech), Pasadena, CA (United States). Dept. of Applied Physics and Materials Science
- California Institute of Technology (CalTech), Pasadena, CA (United States). Dept. of Applied Physics and Materials Science. Dept. of Physics
- Univ. di Roma 'Tor Vergata', Rome (Italy). INFN. Dipartimento di Fisica
- Publication Date:
- Research Org.:
- California Institute of Technology (CalTech), Pasadena, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1803598
- Grant/Contract Number:
- SC0019166; AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Physics. Condensed Matter
- Additional Journal Information:
- Journal Volume: 32; Journal Issue: 8; Journal ID: ISSN 0953-8984
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Jhalani, Vatsal A., Chen, Hsiao-Yi, Palummo, Maurizia, and Bernardi, Marco. Precise radiative lifetimes in bulk crystals from first principles: the case of wurtzite gallium nitride. United States: N. p., 2019.
Web. doi:10.1088/1361-648x/ab5563.
Jhalani, Vatsal A., Chen, Hsiao-Yi, Palummo, Maurizia, & Bernardi, Marco. Precise radiative lifetimes in bulk crystals from first principles: the case of wurtzite gallium nitride. United States. https://doi.org/10.1088/1361-648x/ab5563
Jhalani, Vatsal A., Chen, Hsiao-Yi, Palummo, Maurizia, and Bernardi, Marco. Fri .
"Precise radiative lifetimes in bulk crystals from first principles: the case of wurtzite gallium nitride". United States. https://doi.org/10.1088/1361-648x/ab5563. https://www.osti.gov/servlets/purl/1803598.
@article{osti_1803598,
title = {Precise radiative lifetimes in bulk crystals from first principles: the case of wurtzite gallium nitride},
author = {Jhalani, Vatsal A. and Chen, Hsiao-Yi and Palummo, Maurizia and Bernardi, Marco},
abstractNote = {Gallium nitride (GaN) is a key semiconductor for solid-state lighting, but its radiative processes are not fully understood. Here we show a first-principles approach to accurately compute the radiative lifetimes in bulk uniaxial crystals, focusing on wurtzite GaN. Our computed radiative lifetimes are in very good agreement with experiment up to 100 K. We show that taking into account excitons (through the Bethe–Salpeter equation) and spin–orbit coupling is essential for computing accurate radiative lifetimes. A model for exciton dissociation into free carriers allows us to compute the radiative lifetimes up to room temperature. Our work enables precise radiative lifetime calculations in III-nitrides and other anisotropic solid-state emitters.},
doi = {10.1088/1361-648x/ab5563},
journal = {Journal of Physics. Condensed Matter},
number = 8,
volume = 32,
place = {United States},
year = {Fri Nov 22 00:00:00 EST 2019},
month = {Fri Nov 22 00:00:00 EST 2019}
}
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