Intrinsic Defect Properties in Halide Double Perovskites for Optoelectronic Applications
Abstract
Lead-free halide double perovskites with the formula of quaternary have recently attracted intense interest as alternatives to lead-halide-perovskite-based optoelectronic materials for their nontoxicity and enhanced chemical and thermodynamic stability. However, the understanding of intrinsic defect properties and their effects on carrier transport and Fermi level tuning is still limited. In this paper, we show that, by exploring the phase diagram of a halide double perovskite, one can control the effects of intrinsic defects on carrier trapping and Fermi-level pinning. Furthermore, we reveal the ideal growth conditions to grow p type and as well as semi-insulating with low trap density for targeted photovoltaic or visible light/radiation detection application.
- Authors:
-
[2];
- Jilin Univ., Changchun (China). State Key Lab. of Superhard Materials, Key Lab. of Automobile Materials of MOE
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- National Natural Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1784206
- Grant/Contract Number:
- AC05-00OR22725; 61722403; 11674121
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Applied
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 4; Journal ID: ISSN 2331-7019
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; electronic structure; optoelectronics; point defects; vacancies; perovskite; photovoltaic absorbers; semiconductor compounds; first-principles
Citation Formats
Li, Tianshu, Zhao, Xingang, Yang, Dongwen, Du, Mao-Hua, and Zhang, Lijun. Intrinsic Defect Properties in Halide Double Perovskites for Optoelectronic Applications. United States: N. p., 2018.
Web. doi:10.1103/physrevapplied.10.041001.
Li, Tianshu, Zhao, Xingang, Yang, Dongwen, Du, Mao-Hua, & Zhang, Lijun. Intrinsic Defect Properties in Halide Double Perovskites for Optoelectronic Applications. United States. https://doi.org/10.1103/physrevapplied.10.041001
Li, Tianshu, Zhao, Xingang, Yang, Dongwen, Du, Mao-Hua, and Zhang, Lijun. Thu .
"Intrinsic Defect Properties in Halide Double Perovskites for Optoelectronic Applications". United States. https://doi.org/10.1103/physrevapplied.10.041001. https://www.osti.gov/servlets/purl/1784206.
@article{osti_1784206,
title = {Intrinsic Defect Properties in Halide Double Perovskites for Optoelectronic Applications},
author = {Li, Tianshu and Zhao, Xingang and Yang, Dongwen and Du, Mao-Hua and Zhang, Lijun},
abstractNote = {Lead-free halide double perovskites with the formula of quaternary A2+B+B'3+X6- have recently attracted intense interest as alternatives to lead-halide-perovskite-based optoelectronic materials for their nontoxicity and enhanced chemical and thermodynamic stability. However, the understanding of intrinsic defect properties and their effects on carrier transport and Fermi level tuning is still limited. In this paper, we show that, by exploring the phase diagram of a halide double perovskite, one can control the effects of intrinsic defects on carrier trapping and Fermi-level pinning. Furthermore, we reveal the ideal growth conditions to grow p type Cs2AgInCl6 and Cs2AgBiCl6 as well as semi-insulating Cs2AgBiBr6 with low trap density for targeted photovoltaic or visible light/radiation detection application.},
doi = {10.1103/physrevapplied.10.041001},
journal = {Physical Review Applied},
number = 4,
volume = 10,
place = {United States},
year = {Thu Oct 11 00:00:00 EDT 2018},
month = {Thu Oct 11 00:00:00 EDT 2018}
}
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