Growth and stability of Pb intercalated phases under graphene on SiC

Chen, S.; Thiel, P. A.; Conrad, E; Tringides, M. C.

doi:10.1103/physrevmaterials.4.124005

Title: Growth and stability of Pb intercalated phases under graphene on SiC

Abstract

Graphene intercalation is a novel way to control graphene's band structure and generate two-dimensional quantum materials with unusual spintronic and electronic properties. In spite of its importance, information about the intercalation mechanism is lacking, especially the role of low density domain boundaries between regions of graphene of different thickness. With high resolution surface diffraction we have systematically studied Pb intercalation on epi-graphene grown on SiC, with domain boundaries between buffer and single layer graphene. By examining the evolution of different diffraction spots as a function of tempertature, the location of Pb and stability of the intercalated phases underneath were determined.

Authors:

^[1]; Thiel, P. A. ^[1]; Conrad, E ^[2]; Tringides, M. C. ^[1]

Ames Lab., Ames, IA (United States); Iowa State Univ., Ames, IA (United States)
Georgia Inst. of Technology, Atlanta, GA (United States)

Publication Date:: Thu Dec 17 00:00:00 EST 2020

Research Org.:: Ames Lab., Ames, IA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

OSTI Identifier:: 1762120

Report Number(s):: IS-J-10,390
Journal ID: ISSN 2475-9953; TRN: US2205810

Grant/Contract Number:: AC02-07CH11358

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Materials

Additional Journal Information:: Journal Volume: 4; Journal Issue: 12; Journal ID: ISSN 2475-9953

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Chen, S., Thiel, P. A., Conrad, E, and Tringides, M. C. Growth and stability of Pb intercalated phases under graphene on SiC.  United States: N. p., 2020. 
Web.  doi:10.1103/physrevmaterials.4.124005.

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                    Chen, S., Thiel, P. A., Conrad, E, & Tringides, M. C. Growth and stability of Pb intercalated phases under graphene on SiC.  United States.  https://doi.org/10.1103/physrevmaterials.4.124005

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                    Chen, S., Thiel, P. A., Conrad, E, and Tringides, M. C. Thu .  
"Growth and stability of Pb intercalated phases under graphene on SiC".  United States.  https://doi.org/10.1103/physrevmaterials.4.124005.  https://www.osti.gov/servlets/purl/1762120.

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@article{osti_1762120,

  title        = {Growth and stability of Pb intercalated phases under graphene on SiC},

  author       = {Chen, S. and Thiel, P. A. and Conrad, E and Tringides, M. C.},

  abstractNote = {Graphene intercalation is a novel way to control graphene's band structure and generate two-dimensional quantum materials with unusual spintronic and electronic properties. In spite of its importance, information about the intercalation mechanism is lacking, especially the role of low density domain boundaries between regions of graphene of different thickness. With high resolution surface diffraction we have systematically studied Pb intercalation on epi-graphene grown on SiC, with domain boundaries between buffer and single layer graphene. By examining the evolution of different diffraction spots as a function of tempertature, the location of Pb and stability of the intercalated phases underneath were determined.},

  doi          = {10.1103/physrevmaterials.4.124005},

  journal      = {Physical Review Materials},

  number       = 12,

  volume       = 4,

  place        = {United States},

  year         = {Thu Dec 17 00:00:00 EST 2020},

  month        = {Thu Dec 17 00:00:00 EST 2020}

}

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Title: Growth and stability of Pb intercalated phases under graphene on SiC

Abstract

Citation Formats

Wide Band Gap Semiconductor from a Hidden 2D Incommensurate Graphene Phase journal, December 2016

Structural and Electronic Properties of Pb- Intercalated Graphene on Ru(0001) journal, March 2015

Intrinsic stacking domains in graphene on silicon carbide: A pathway for intercalation journal, October 2018

Edge states and ballistic transport in zigzag graphene ribbons: The role of SiC polytypes journal, July 2019

Spin–Orbit Coupling Induced Gap in Graphene on Pt(111) with Intercalated Pb Monolayer journal, January 2017

Ca intercalated bilayer graphene as a thinnest limit of superconducting C6Ca journal, November 2012

Growth mechanism for epitaxial graphene on vicinal 6 H -SiC ( 0001 ) surfaces: A scanning tunneling microscopy study journal, July 2009

Growth dynamics and kinetics of monolayer and multilayer graphene on a 6H-SiC(0001) substrate journal, January 2010

A comparative study of intercalation mechanism at graphene/Ru(0001) interface journal, November 2013

The dense α-√3×√3Pb/Si(111) phase: A comprehensive STM and SPA-LEED study of ordering, phase transitions and interactions journal, April 2006

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The electronic properties of graphene journal, January 2009

Selective growth of Pb islands on graphene/SiC buffer layers journal, February 2015

Atomic Structure of Epitaxial Graphene Sidewall Nanoribbons: Flat Graphene, Miniribbons, and the Confinement Gap journal, December 2014

Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics journal, December 2004

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Wide Band Gap Semiconductor from a Hidden 2D Incommensurate Graphene Phase
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Intrinsic stacking domains in graphene on silicon carbide: A pathway for intercalation
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The dense α-√3×√3Pb/Si(111) phase: A comprehensive STM and SPA-LEED study of ordering, phase transitions and interactions
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The mechanism of caesium intercalation of graphene
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Reverse-engineering of graphene on metal surfaces: a case study of embedded ruthenium
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Tuning the doping level of graphene in the vicinity of the Van Hove singularity via ytterbium intercalation
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Diffraction paradox: An unusually broad diffraction background marks high quality graphene
journal, October 2019

Bipolar gating of epitaxial graphene by intercalation of Ge
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Superconducting Calcium-Intercalated Bilayer Graphene
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Intercalation of metal islands and films at the interface of epitaxially grown graphene and Ru(0001) surfaces
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Surface intercalation of gold underneath a graphene monolayer on SiC(0001) studied by scanning tunneling microscopy and spectroscopy
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Spot profile analysis (LEED) of defects at silicon surfaces
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Selective growth of Pb islands on graphene/SiC buffer layers
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Atomic Structure of Epitaxial Graphene Sidewall Nanoribbons: Flat Graphene, Miniribbons, and the Confinement Gap
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