Structure and magnetism in Ga-rich MnGa/GaN thin films and unexpected giant perpendicular anisotropy in the ultra-thin film limit
Abstract
Here, we report structural, surface, and magnetic investigations of ferromagnetic Ga-rich MnGa thin and ultra-thin films grown on semiconducting GaN(0001) using molecular beam epitaxy. The Mn:Ga composition ratio is varied from ≈1 (stoichiometric) to ≈0.42 (very Ga-rich) for different samples. We find that the L10 MnGa phase is preserved down to a Mn:Ga ratio of ≈0.81. As the Ga concentration increases, we observe the coexistence of more Ga-rich phases, namely Mn3Ga5 and Mn2Ga5. Room temperature scanning tunneling microscopy imaging reveals highly epitaxial films, with atomically smooth and highly reconstructed surfaces. Magnetic characterizations show how the magnetic properties evolve with changing composition and that giant perpendicular magnetic anisotropy is induced by reducing the size of our films.
- Authors:
-
- Ohio Univ., Athens, OH (United States)
- The Ohio State Univ., Columbus, OH (United States)
- Publication Date:
- Research Org.:
- Ohio Univ., Athens, OH (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1737518
- Alternate Identifier(s):
- OSTI ID: 1325391
- Report Number(s):
- 83
Journal ID: ISSN 0169-4332; TRN: US2205334
- Grant/Contract Number:
- FG02-06ER46317; SC0001304
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Surface Science
- Additional Journal Information:
- Journal Volume: 367; Journal ID: ISSN 0169-4332
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; MnGa; perpendicular magnetic anisotropy; manganese gallium; gallium nitride, scanning tunneling microscopy
Citation Formats
Mandru, Andrada-Oana, Corbett, Joseph P., Lucy, Jeremy M., Richard, Andrea L., Yang, Fengyuan, Ingram, David C., and Smith, Arthur R. Structure and magnetism in Ga-rich MnGa/GaN thin films and unexpected giant perpendicular anisotropy in the ultra-thin film limit. United States: N. p., 2016.
Web. doi:10.1016/j.apsusc.2016.01.105.
Mandru, Andrada-Oana, Corbett, Joseph P., Lucy, Jeremy M., Richard, Andrea L., Yang, Fengyuan, Ingram, David C., & Smith, Arthur R. Structure and magnetism in Ga-rich MnGa/GaN thin films and unexpected giant perpendicular anisotropy in the ultra-thin film limit. United States. https://doi.org/10.1016/j.apsusc.2016.01.105
Mandru, Andrada-Oana, Corbett, Joseph P., Lucy, Jeremy M., Richard, Andrea L., Yang, Fengyuan, Ingram, David C., and Smith, Arthur R. Thu .
"Structure and magnetism in Ga-rich MnGa/GaN thin films and unexpected giant perpendicular anisotropy in the ultra-thin film limit". United States. https://doi.org/10.1016/j.apsusc.2016.01.105. https://www.osti.gov/servlets/purl/1737518.
@article{osti_1737518,
title = {Structure and magnetism in Ga-rich MnGa/GaN thin films and unexpected giant perpendicular anisotropy in the ultra-thin film limit},
author = {Mandru, Andrada-Oana and Corbett, Joseph P. and Lucy, Jeremy M. and Richard, Andrea L. and Yang, Fengyuan and Ingram, David C. and Smith, Arthur R.},
abstractNote = {Here, we report structural, surface, and magnetic investigations of ferromagnetic Ga-rich MnGa thin and ultra-thin films grown on semiconducting GaN(0001) using molecular beam epitaxy. The Mn:Ga composition ratio is varied from ≈1 (stoichiometric) to ≈0.42 (very Ga-rich) for different samples. We find that the L10 MnGa phase is preserved down to a Mn:Ga ratio of ≈0.81. As the Ga concentration increases, we observe the coexistence of more Ga-rich phases, namely Mn3Ga5 and Mn2Ga5. Room temperature scanning tunneling microscopy imaging reveals highly epitaxial films, with atomically smooth and highly reconstructed surfaces. Magnetic characterizations show how the magnetic properties evolve with changing composition and that giant perpendicular magnetic anisotropy is induced by reducing the size of our films.},
doi = {10.1016/j.apsusc.2016.01.105},
journal = {Applied Surface Science},
number = ,
volume = 367,
place = {United States},
year = {Thu Jan 14 00:00:00 EST 2016},
month = {Thu Jan 14 00:00:00 EST 2016}
}
Web of Science
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