Title: Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions

Abstract

We differentiate the effect of strain induced by lattice-mismatched growth from strain induced by mechanical deformation on cubic nonradiative Auger recombination in narrow-gap GaInAsSb/GaSb quantum well (QW) heterostructures. The typical reduction in the Auger coefficient observed with lattice-mismatched growth appears to be due to the concomitant compositional change rather than the addition of strain, with implications for mid-IR semiconductor laser design. We induced a range of internal compressive strain in five samples from -0.90% to -2.07% by varying the composition during the growth and mechanically induced a similar range of internal strain in analogous quantum well membrane samples. We performed time-resolved photoluminescence and differential reflectivity measurements to extract the carrier recombination dynamics, taken at 300 K with carrier densities from $2.7\times {10}^{18}$ cm^-3 to $1.4\times {10}^{19}$ cm^-3. We observed no change with strain in the cubic Auger coefficient of samples that were strained mechanically, but we did observe a trend with strain in samples that were strained by the QW alloy composition. Measured Auger coefficients ranged from $3.0\times 10^{-29}$ cm⁶ s^-1 to $3.0\times 10^{-28}$ cm⁶ s^-1.

Authors:

Underwood, Kenneth J.  ^[1];

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Briggs, Andrew F.  ^[2];

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Sifferman, Scott D.  ^[2];

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Verma, Varun B. ^[3]; Sirica, Nicholas Steven  ^[4];

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Prasankumar, Rohit Prativadi  ^[4];

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• Search DOE PAGES for ORCID "0000-0003-0902-2831"

Nam, Sae Woo ^[3]; Silverman, Kevin L. ^[3]; Bank, Seth R.  ^[2];

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• Search DOE PAGES for ORCID "0000-0002-5682-0126"

Gopinath, Juliet T.  ^[1]

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• Search DOE PAGES for ORCID "0000-0003-2387-5371"

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+ Show Author Affiliations

1. Univ. of Colorado, Boulder, CO (United States)
2. Univ. of Texas, Austin, TX (United States)
3. National Inst. of Standards and Technology (NIST), Boulder, CO (United States)
4. Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)

Publication Date:

Mon Jun 29 00:00:00 EDT 2020

Research Org.:

Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Org.:

USDOE Office of Science (SC). Basic Energy Sciences (BES); National Science Foundation (NSF); Center for Integrated Nanotechnologies (CINT); Defense Advanced Research Projects Agency (DARPA); US Air Force Office of Scientific Research (AFOSR)

OSTI Identifier:

1726199

Report Number(s):

LA-UR-20-23245
Journal ID: ISSN 0003-6951

Grant/Contract Number:  

89233218CNA000001; DMR 1508783; 150860; 2018BC0091; W911NF-15-1-0621; FA9550-15-1-0506

Resource Type:

Accepted Manuscript

Journal Name:

Applied Physics Letters

Additional Journal Information:

Journal Volume: 116; Journal Issue: 26; Journal ID: ISSN 0003-6951

Publisher:

American Institute of Physics (AIP)

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; Recombination reactions; heterostructures; semiconductor lasers; atomic and molecular spectra; electronic transport; time-resolved photoluminescence; quantum wells