Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
Abstract
There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for deformable device applications. Herein, we demonstrate a method of creating a deformable LED, based on remote heteroepitaxy of GaN microrod (MR) p-n junction arrays on c-Al2O3 wafer across graphene. The use of graphene allows the transfer of MR LED arrays onto a copper plate, and spatially separate MR arrays offer ideal device geometry suitable for deformable LED in various shapes without serious device performance degradation. Moreover, remote heteroepitaxy also allows the wafer to be reused, allowing reproducible production of MR LEDs using a single substrate without noticeable device degradation. The remote heteroepitaxial relation is determined by high-resolution scanning transmission electron microscopy, and the density functional theory simulations clarify how the remote heteroepitaxy is made possible through graphene.
- Authors:
-
[1];
[2];
[1];
[3];
[2];
[6];
[8];
[3];
[1];
[9];
[1]
- Sejong Univ., Seoul (Korea, Republic of)
- Univ. of Texas at Dallas, Richardson, TX (United States)
- Ewha Womans Univ., Seoul (Korea, Republic of)
- Korea Electronics Technology Inst. (KETI), Seongnam (Korea, Republic of)
- ITSWELL Division R&D Center, CoAsia Co. Ltd., Incheon (Korea, Republic of)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)
- Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of)
- Korea Univ., Seoul (Korea, Republic of)
- Univ. of Texas at Dallas, Richardson, TX (United States); Sejong Univ., Seoul (Korea, Republic of)
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1659201
- Report Number(s):
- LA-UR-19-29399
Journal ID: ISSN 2375-2548
- Grant/Contract Number:
- 89233218CNA000001
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Science Advances
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 23; Journal ID: ISSN 2375-2548
- Publisher:
- AAAS
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Material Science
Citation Formats
Jeong, Junseok, Wang, Qingxiao, Cha, Janghwan, Jin, Dae Kwon, Shin, Dong Hoon, Kwon, Sunah, Kang, Bong Kyun, Jang, Jun Hyuk, Yang, Woo Seok, Choi, Yong Seok, Yoo, Jinkyoung, Kim, Jong Kyu, Lee, Chul-Ho, Lee, Sang Wook, Zakhidov, Anvar, Hong, Suklyun, Kim, Moon J., and Hong, Young Joon. Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle. United States: N. p., 2020.
Web. doi:10.1126/sciadv.aaz5180.
Jeong, Junseok, Wang, Qingxiao, Cha, Janghwan, Jin, Dae Kwon, Shin, Dong Hoon, Kwon, Sunah, Kang, Bong Kyun, Jang, Jun Hyuk, Yang, Woo Seok, Choi, Yong Seok, Yoo, Jinkyoung, Kim, Jong Kyu, Lee, Chul-Ho, Lee, Sang Wook, Zakhidov, Anvar, Hong, Suklyun, Kim, Moon J., & Hong, Young Joon. Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle. United States. https://doi.org/10.1126/sciadv.aaz5180
Jeong, Junseok, Wang, Qingxiao, Cha, Janghwan, Jin, Dae Kwon, Shin, Dong Hoon, Kwon, Sunah, Kang, Bong Kyun, Jang, Jun Hyuk, Yang, Woo Seok, Choi, Yong Seok, Yoo, Jinkyoung, Kim, Jong Kyu, Lee, Chul-Ho, Lee, Sang Wook, Zakhidov, Anvar, Hong, Suklyun, Kim, Moon J., and Hong, Young Joon. Wed .
"Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle". United States. https://doi.org/10.1126/sciadv.aaz5180. https://www.osti.gov/servlets/purl/1659201.
@article{osti_1659201,
title = {Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle},
author = {Jeong, Junseok and Wang, Qingxiao and Cha, Janghwan and Jin, Dae Kwon and Shin, Dong Hoon and Kwon, Sunah and Kang, Bong Kyun and Jang, Jun Hyuk and Yang, Woo Seok and Choi, Yong Seok and Yoo, Jinkyoung and Kim, Jong Kyu and Lee, Chul-Ho and Lee, Sang Wook and Zakhidov, Anvar and Hong, Suklyun and Kim, Moon J. and Hong, Young Joon},
abstractNote = {There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for deformable device applications. Herein, we demonstrate a method of creating a deformable LED, based on remote heteroepitaxy of GaN microrod (MR) p-n junction arrays on c-Al2O3 wafer across graphene. The use of graphene allows the transfer of MR LED arrays onto a copper plate, and spatially separate MR arrays offer ideal device geometry suitable for deformable LED in various shapes without serious device performance degradation. Moreover, remote heteroepitaxy also allows the wafer to be reused, allowing reproducible production of MR LEDs using a single substrate without noticeable device degradation. The remote heteroepitaxial relation is determined by high-resolution scanning transmission electron microscopy, and the density functional theory simulations clarify how the remote heteroepitaxy is made possible through graphene.},
doi = {10.1126/sciadv.aaz5180},
journal = {Science Advances},
number = 23,
volume = 6,
place = {United States},
year = {Wed Jun 03 00:00:00 EDT 2020},
month = {Wed Jun 03 00:00:00 EDT 2020}
}
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Works referenced in this record:
M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices
journal, November 2011
- Koester, Robert; Hwang, Jun-Seok; Salomon, Damien
- Nano Letters, Vol. 11, Issue 11
Generalized Gradient Approximation Made Simple
journal, October 1996
- Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
- Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
journal, December 2017
- Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen
- Nature Communications, Vol. 8, Issue 1
InGaN/GaN Core–Shell Single Nanowire Light Emitting Diodes with Graphene-Based P-Contact
journal, April 2014
- Tchernycheva, M.; Lavenus, P.; Zhang, H.
- Nano Letters, Vol. 14, Issue 5
III-nitride blue microdisplays
journal, February 2001
- Jiang, H. X.; Jin, S. X.; Li, J.
- Applied Physics Letters, Vol. 78, Issue 9
Water-resistant flexible GaN LED on a liquid crystal polymer substrate for implantable biomedical applications
journal, January 2012
- Lee, Sang Yong; Park, Kwi-Il; Huh, Chul
- Nano Energy, Vol. 1, Issue 1
Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes
journal, October 2013
- Nguyen, Hieu Pham Trung; Zhang, Shaofei; Connie, Ashfiqua T.
- Nano Letters, Vol. 13, Issue 11
Flexible Inorganic Nanostructure Light-Emitting Diodes Fabricated on Graphene Films
journal, September 2011
- Lee, Chul-Ho; Kim, Yong-Jin; Hong, Young Joon
- Advanced Materials, Vol. 23, Issue 40
van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene
journal, February 2012
- Hong, Young Joon; Lee, Wi Hyoung; Wu, Yaping
- Nano Letters, Vol. 12, Issue 3
From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999
- Kresse, G.; Joubert, D.
- Physical Review B, Vol. 59, Issue 3, p. 1758-1775
Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires
journal, September 2015
- Dai, Xing; Messanvi, Agnes; Zhang, Hezhi
- Nano Letters, Vol. 15, Issue 10
High-Resolution 128$times$ 96 Nitride Microdisplay
journal, May 2004
- Choi, H. W.; Jeon, C. W.; Dawson, M. D.
- IEEE Electron Device Letters, Vol. 25, Issue 5
p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)
journal, May 2011
- Nguyen, H. P. T.; Zhang, S.; Cui, K.
- Nano Letters, Vol. 11, Issue 5
Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
journal, September 2010
- Guo, Wei; Zhang, Meng; Banerjee, Animesh
- Nano Letters, Vol. 10, Issue 9
Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns
journal, January 2016
- Kong, X.; Li, H.; Albert, S.
- Nanotechnology, Vol. 27, Issue 6
Remote epitaxy through graphene enables two-dimensional material-based layer transfer
journal, April 2017
- Kim, Yunjo; Cruz, Samuel S.; Lee, Kyusang
- Nature, Vol. 544, Issue 7650
Remote heteroepitaxy across graphene: Hydrothermal growth of vertical ZnO microrods on graphene-coated GaN substrate
journal, December 2018
- Jeong, Junseok; Min, Kyung-Ah; Kang, Bong Kyun
- Applied Physics Letters, Vol. 113, Issue 23
Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature
journal, January 2015
- Li, K. H.; Liu, X.; Wang, Q.
- Nature Nanotechnology, Vol. 10, Issue 2
GaN nanowire light emitting diodes based on templated and scalable nanowire growth process
journal, January 2009
- Hersee, S. D.; Fairchild, M.; Rishinaramangalam, A. K.
- Electronics Letters, Vol. 45, Issue 1
Incommensurate van der Waals Epitaxy of Nanowire Arrays: A Case Study with ZnO on Muscovite Mica Substrates
journal, January 2012
- Utama, Muhammad Iqbal Bakti; Belarre, Francisco J.; Magen, Cesar
- Nano Letters, Vol. 12, Issue 4
Full-Color Single Nanowire Pixels for Projection Displays
journal, June 2016
- Ra, Yong-Ho; Wang, Renjie; Woo, Steffi Y.
- Nano Letters, Vol. 16, Issue 7
In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy
journal, May 2012
- Hestroffer, K.; Leclere, C.; Cantelli, V.
- Applied Physics Letters, Vol. 100, Issue 21
Semiconductor Nanowire Light-Emitting Diodes Grown on Metal: A Direction Toward Large-Scale Fabrication of Nanowire Devices
journal, August 2015
- Sarwar, ATM Golam; Carnevale, Santino D.; Yang, Fan
- Small, Vol. 11, Issue 40
Coaxial Group III−Nitride Nanowire Photovoltaics
journal, April 2009
- Dong, Yajie; Tian, Bozhi; Kempa, Thomas J.
- Nano Letters, Vol. 9, Issue 5, p. 2183-2187
A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu
journal, April 2010
- Grimme, Stefan; Antony, Jens; Ehrlich, Stephan
- The Journal of Chemical Physics, Vol. 132, Issue 15
Threading defect elimination in GaN nanowires
journal, June 2011
- Hersee, Stephen D.; Rishinaramangalam, Ashwin K.; Fairchild, Michael N.
- Journal of Materials Research, Vol. 26, Issue 17
Epitaxy of GaN Nanowires on Graphene
journal, July 2016
- Kumaresan, Vishnuvarthan; Largeau, Ludovic; Madouri, Ali
- Nano Letters, Vol. 16, Issue 8
Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965
- Kohn, W.; Sham, L. J.
- Physical Review, Vol. 140, Issue 4A, p. A1133-A1138
Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates
journal, October 2011
- Choi, Jun Hee; Zoulkarneev, Andrei; Kim, Sun Il
- Nature Photonics, Vol. 5, Issue 12
Heterogeneous integration of single-crystalline complex-oxide membranes
journal, February 2020
- Kum, Hyun S.; Lee, Hyungwoo; Kim, Sungkyu
- Nature, Vol. 578, Issue 7793
Influence of Temperature‐Dependent Substrate Decomposition on Graphene for Separable GaN Growth
journal, July 2019
- Park, Jeong‐Hwan; Lee, Jun‐Yeob; Park, Mun‐Do
- Advanced Materials Interfaces, Vol. 6, Issue 18
Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator
journal, May 2018
- Lee, Han Eol; Choi, JeHyuk; Lee, Seung Hyun
- Advanced Materials, Vol. 30, Issue 28
Bright visible light emission from graphene
journal, June 2015
- Kim, Young Duck; Kim, Hakseong; Cho, Yujin
- Nature Nanotechnology, Vol. 10, Issue 8
Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes
journal, September 2014
- Chung, Kunook; Beak, Hyeonjun; Tchoe, Youngbin
- APL Materials, Vol. 2, Issue 9
Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors
journal, March 2016
- Guan, Nan; Dai, Xing; Messanvi, Agnès
- ACS Photonics, Vol. 3, Issue 4
A III–V nanowire channel on silicon for high-performance vertical transistors
journal, August 2012
- Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi
- Nature, Vol. 488, Issue 7410
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices
journal, October 2010
- Chung, Kunook; Lee, Chul-Ho; Yi, Gyu-Chul
- Science, Vol. 330, Issue 6004
Polarity governs atomic interaction through two-dimensional materials
journal, October 2018
- Kong, Wei; Li, Huashan; Qiao, Kuan
- Nature Materials, Vol. 17, Issue 11
Flow-Rate Modulation Epitaxy of GaAs
journal, December 1985
- Kobayashi, Naoki; Makimoto, Toshiki; Horikoshi, Yoshiji
- Japanese Journal of Applied Physics, Vol. 24, Issue Part 2, No. 12
Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al 2 O 3
journal, September 1996
- Wu, X. H.; Brown, L. M.; Kapolnek, D.
- Journal of Applied Physics, Vol. 80, Issue 6
Visible-Color-Tunable Light-Emitting Diodes
journal, June 2011
- Hong, Young Joon; Lee, Chul-Ho; Yoon, Aram
- Advanced Materials, Vol. 23, Issue 29
Materials and Mechanics for Stretchable Electronics
journal, March 2010
- Rogers, J. A.; Someya, T.; Huang, Y.
- Science, Vol. 327, Issue 5973, p. 1603-1607
Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array
journal, January 2013
- Chen, Horng-Shyang; Yao, Yu-Feng; Liao, Che-Hao
- Optics Letters, Vol. 38, Issue 17
Effects of compressive strain on optical properties of InxGa1−xN∕GaN quantum wells
journal, October 2006
- Khan, N.; Li, J.
- Applied Physics Letters, Vol. 89, Issue 15
A wireless closed-loop system for optogenetic peripheral neuromodulation
journal, January 2019
- Mickle, Aaron D.; Won, Sang Min; Noh, Kyung Nim
- Nature, Vol. 565, Issue 7739
Ultrafast single photon emitting quantum photonic structures based on a nano-obelisk
journal, July 2013
- Kim, Je-Hyung; Ko, Young-Ho; Gong, Su-Hyun
- Scientific Reports, Vol. 3, Issue 1
GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si
journal, May 2010
- Tomioka, Katsuhiro; Motohisa, Junichi; Hara, Shinjiroh
- Nano Letters, Vol. 10, Issue 5
Stretchable Active Matrix Inorganic Light-Emitting Diode Display Enabled by Overlay-Aligned Roll-Transfer Printing
journal, February 2017
- Choi, Minwoo; Jang, Bongkyun; Lee, Wonho
- Advanced Functional Materials, Vol. 27, Issue 11
Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
journal, May 2016
- Calabrese, Gabriele; Corfdir, Pierre; Gao, Guanhui
- Applied Physics Letters, Vol. 108, Issue 20
Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy
journal, November 2009
- Koester, R.; Hwang, J. S.; Durand, C.
- Nanotechnology, Vol. 21, Issue 1
Remote epitaxy using graphene enables growth of stress-free GaN
journal, October 2019
- Journot, T.; Okuno, H.; Mollard, N.
- Nanotechnology, Vol. 30, Issue 50