Interaction between magnetic moments and itinerant carriers in $d^0$ ferromagnetic SiC
Abstract
Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. In this work, we investigate magnetic and transport properties in d0 ferromagnetic SiC single crystals prepared by postimplantation pulsed laser annealing. Magnetic moments are contributed by the p states of carbon atoms, but their magnetic circular dichroism is different from that in semi-insulating SiC samples. The anomalous Hall effect and negative magnetoresistance indicate the influence of d0 spin order on free carriers. The ferromagnetism is relatively weak in N-implanted SiC compared with that in Al-implanted SiC after annealing. The results suggest that d0 magnetic moments and itinerant carriers can interact with each other, which will facilitate the development of SiC spintronic devices with d0 ferromagnetism.
- Authors:
-
- Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany)
- Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Technische Univ., Dresden (Germany)
- Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Lomonosov Moscow State Univ. (Russia)
- Beijing Univ. of Chemical Technology (China)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1634032
- Alternate Identifier(s):
- OSTI ID: 1357703
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 95; Journal Issue: 19; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; magnetism; point defects; transport phenomena; doped semiconductors; magnetic semiconductors; semiconductor compounds; single crystal materials; electron spin resonance; ferromagnetic resonance; ion implantation; magnetization measurements; positron annihilation spectroscopy; raman spectroscopy; x-ray absorption spectroscopy; x-ray magnetic circular dichroism
Citation Formats
Liu, Yu, Yuan, Ye, Liu, Fang, Böttger, Roman, Anwand, Wolfgang, Wang, Yutian, Semisalova, Anna, Ponomaryov, Alexey N., Lu, Xia, N’Diaye, Alpha T., Arenholz, Elke, Heera, Viton, Skorupa, Wolfgang, Helm, Manfred, and Zhou, Shengqiang. Interaction between magnetic moments and itinerant carriers in $d^0$ ferromagnetic SiC. United States: N. p., 2017.
Web. doi:10.1103/physrevb.95.195309.
Liu, Yu, Yuan, Ye, Liu, Fang, Böttger, Roman, Anwand, Wolfgang, Wang, Yutian, Semisalova, Anna, Ponomaryov, Alexey N., Lu, Xia, N’Diaye, Alpha T., Arenholz, Elke, Heera, Viton, Skorupa, Wolfgang, Helm, Manfred, & Zhou, Shengqiang. Interaction between magnetic moments and itinerant carriers in $d^0$ ferromagnetic SiC. United States. https://doi.org/10.1103/physrevb.95.195309
Liu, Yu, Yuan, Ye, Liu, Fang, Böttger, Roman, Anwand, Wolfgang, Wang, Yutian, Semisalova, Anna, Ponomaryov, Alexey N., Lu, Xia, N’Diaye, Alpha T., Arenholz, Elke, Heera, Viton, Skorupa, Wolfgang, Helm, Manfred, and Zhou, Shengqiang. Wed .
"Interaction between magnetic moments and itinerant carriers in $d^0$ ferromagnetic SiC". United States. https://doi.org/10.1103/physrevb.95.195309. https://www.osti.gov/servlets/purl/1634032.
@article{osti_1634032,
title = {Interaction between magnetic moments and itinerant carriers in $d^0$ ferromagnetic SiC},
author = {Liu, Yu and Yuan, Ye and Liu, Fang and Böttger, Roman and Anwand, Wolfgang and Wang, Yutian and Semisalova, Anna and Ponomaryov, Alexey N. and Lu, Xia and N’Diaye, Alpha T. and Arenholz, Elke and Heera, Viton and Skorupa, Wolfgang and Helm, Manfred and Zhou, Shengqiang},
abstractNote = {Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. In this work, we investigate magnetic and transport properties in d0 ferromagnetic SiC single crystals prepared by postimplantation pulsed laser annealing. Magnetic moments are contributed by the p states of carbon atoms, but their magnetic circular dichroism is different from that in semi-insulating SiC samples. The anomalous Hall effect and negative magnetoresistance indicate the influence of d0 spin order on free carriers. The ferromagnetism is relatively weak in N-implanted SiC compared with that in Al-implanted SiC after annealing. The results suggest that d0 magnetic moments and itinerant carriers can interact with each other, which will facilitate the development of SiC spintronic devices with d0 ferromagnetism.},
doi = {10.1103/physrevb.95.195309},
journal = {Physical Review B},
number = 19,
volume = 95,
place = {United States},
year = {Wed May 17 00:00:00 EDT 2017},
month = {Wed May 17 00:00:00 EDT 2017}
}
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