Separation of current density and electric field domains caused by nonlinear electronic instabilities
Abstract
In 1963 Ridley postulated that under certain bias conditions circuit elements exhibiting a current- or voltage-controlled negative differential resistance will separate into coexisting domains with different current densities or electric fields, respectively, in a process similar to spinodal decomposition of a homogeneous liquid or disproportionation of a metastable chemical compound. The ensuing debate, however, failed to agree on the existence or causes of such electronic decomposition. Using thermal and chemical spectro-microscopy, we directly imaged signatures of current-density and electric-field domains in several metal oxides. The concept of local activity successfully predicts initiation and occurrence of spontaneous electronic decomposition, accompanied by a reduction in internal energy, despite unchanged power input and heat output. This reveals a thermodynamic constraint required to properly model nonlinear circuit elements. Our results explain the electroforming process that initiates information storage via resistance switching in metal oxides and has significant implications for improving neuromorphic computing based on nonlinear dynamical devices.
- Authors:
-
- Hewlett Packard Labs, Palo Alto, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Sponsoring Org.:
- Office of the Director of National Intelligence (ODNI); Intelligence Advanced Research Projects Activity (IARPA); USDOE Office of Science (SC)
- OSTI Identifier:
- 1624097
- Grant/Contract Number:
- AC02-05CH11231; 2017-17013000002
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; science & technology - other topics; electrical and electronic engineering; nonlinear phenomena
Citation Formats
Kumar, Suhas, and Williams, R. Stanley. Separation of current density and electric field domains caused by nonlinear electronic instabilities. United States: N. p., 2018.
Web. doi:10.1038/s41467-018-04452-w.
Kumar, Suhas, & Williams, R. Stanley. Separation of current density and electric field domains caused by nonlinear electronic instabilities. United States. https://doi.org/10.1038/s41467-018-04452-w
Kumar, Suhas, and Williams, R. Stanley. Wed .
"Separation of current density and electric field domains caused by nonlinear electronic instabilities". United States. https://doi.org/10.1038/s41467-018-04452-w. https://www.osti.gov/servlets/purl/1624097.
@article{osti_1624097,
title = {Separation of current density and electric field domains caused by nonlinear electronic instabilities},
author = {Kumar, Suhas and Williams, R. Stanley},
abstractNote = {In 1963 Ridley postulated that under certain bias conditions circuit elements exhibiting a current- or voltage-controlled negative differential resistance will separate into coexisting domains with different current densities or electric fields, respectively, in a process similar to spinodal decomposition of a homogeneous liquid or disproportionation of a metastable chemical compound. The ensuing debate, however, failed to agree on the existence or causes of such electronic decomposition. Using thermal and chemical spectro-microscopy, we directly imaged signatures of current-density and electric-field domains in several metal oxides. The concept of local activity successfully predicts initiation and occurrence of spontaneous electronic decomposition, accompanied by a reduction in internal energy, despite unchanged power input and heat output. This reveals a thermodynamic constraint required to properly model nonlinear circuit elements. Our results explain the electroforming process that initiates information storage via resistance switching in metal oxides and has significant implications for improving neuromorphic computing based on nonlinear dynamical devices.},
doi = {10.1038/s41467-018-04452-w},
journal = {Nature Communications},
number = 1,
volume = 9,
place = {United States},
year = {Wed May 23 00:00:00 EDT 2018},
month = {Wed May 23 00:00:00 EDT 2018}
}
Web of Science
Figures / Tables:
Works referenced in this record:
Electro-Thermal Model of Threshold Switching in TaO x -Based Devices
journal, March 2017
- Goodwill, Jonathan M.; Sharma, Abhishek A.; Li, Dasheng
- ACS Applied Materials & Interfaces, Vol. 9, Issue 13
Study of Phase Transition in NbO2
journal, January 1967
- Sakata, T.; Sakata, K.; Nishida, I.
- physica status solidi (b), Vol. 20, Issue 2
Multidimensional Simulation of Threshold Switching in NbO 2 Based on an Electric Field Triggered Thermal Runaway Model
journal, June 2016
- Funck, Carsten; Menzel, Stephan; Aslam, Nabeel
- Advanced Electronic Materials, Vol. 2, Issue 7
Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
text, January 2016
- Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul
- arXiv
Local Activity is the Origin of Complexity
journal, November 2005
- Chua, Leon O.
- International Journal of Bifurcation and Chaos, Vol. 15, Issue 11
Specific Negative Resistance in Solids
journal, December 1963
- Ridley, B. K.
- Proceedings of the Physical Society, Vol. 82, Issue 6
A Theory of Domain- and Filament-Formation due to Carrier-Density Fluctuations in Conductors with Negative Differential Resistance
journal, July 1975
- Takeyama, Kyôzô; Kitahara, Kazuo
- Journal of the Physical Society of Japan, Vol. 39, Issue 1
Interferometer-controlled scanning transmission X-ray microscopes at the Advanced Light Source
journal, February 2003
- Kilcoyne, A. L. D.; Tyliszczak, T.; Steele, W. F.
- Journal of Synchrotron Radiation, Vol. 10, Issue 2
Anomalously low electronic thermal conductivity in metallic vanadium dioxide
journal, January 2017
- Lee, Sangwook; Hippalgaonkar, Kedar; Yang, Fan
- Science, Vol. 355, Issue 6323
Multidimensional Simulation of Threshold Switching in NbO 2 Based on an Electric Field Triggered Thermal Runaway Model
journal, June 2016
- Funck, Carsten; Menzel, Stephan; Aslam, Nabeel
- Advanced Electronic Materials, Vol. 2, Issue 7
Calorimetric study of the phase transition in NbO2
journal, October 1982
- Seta, Katsuo; Naito, Keiji
- The Journal of Chemical Thermodynamics, Vol. 14, Issue 10
Studies on the defect structure of α-Nb2O5
journal, January 1966
- Chen, W. K.; Swalin, R. A.
- Journal of Physics and Chemistry of Solids, Vol. 27, Issue 1
An accurate locally active memristor model for S-type negative differential resistance in NbO x
journal, January 2016
- Gibson, Gary A.; Musunuru, Srinitya; Zhang, Jiaming
- Applied Physics Letters, Vol. 108, Issue 2
Multistate Memory Devices Based on Free-standing VO2/TiO2 Microstructures Driven by Joule Self-Heating
journal, April 2012
- Pellegrino, Luca; Manca, Nicola; Kanki, Teruo
- Advanced Materials, Vol. 24, Issue 21
ReRAM-based analog synapse and IMT neuron device for neuromorphic system
conference, April 2016
- Moon, Kibong; Cha, Euijun; Lee, Daeseok
- 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Everything You Wish to Know About Memristors But Are Afraid to Ask
journal, June 2015
- Chua, L.
- Radioengineering, Vol. 24, Issue 2
Specific Negative Resistance in Solids
journal, December 1963
- Ridley, B. K.
- Proceedings of the Physical Society, Vol. 82, Issue 6
Anomalously low electronic thermal conductivity in metallic vanadium dioxide
journal, January 2017
- Lee, Sangwook; Hippalgaonkar, Kedar; Yang, Fan
- Science, Vol. 355, Issue 6323
Study of Phase Transition in NbO2
journal, January 1967
- Sakata, T.; Sakata, K.; Nishida, I.
- physica status solidi (b), Vol. 20, Issue 2
Electro-Thermal Model of Threshold Switching in TaO x -Based Devices
journal, March 2017
- Goodwill, Jonathan M.; Sharma, Abhishek A.; Li, Dasheng
- ACS Applied Materials & Interfaces, Vol. 9, Issue 13
Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System
journal, February 2011
- Pickett, Matthew D.; Borghetti, Julien; Yang, J. Joshua
- Advanced Materials, Vol. 23, Issue 15
Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors
journal, November 2016
- Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng
- ACS Nano, Vol. 10, Issue 12
Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
text, January 2016
- Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul
- arXiv
Current Filaments in Semiconductors
journal, September 1969
- Barnett, A. M.
- IBM Journal of Research and Development, Vol. 13, Issue 5
Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO 2
journal, July 2013
- Kumar, Suhas; Pickett, Matthew D.; Strachan, John Paul
- Advanced Materials, Vol. 25, Issue 42
Temperature and field-dependent transport measurements in continuously tunable tantalum oxide memristors expose the dominant state variable
journal, March 2017
- Graves, Catherine E.; Dávila, Noraica; Merced-Grafals, Emmanuelle J.
- Applied Physics Letters, Vol. 110, Issue 12
Resonant tunnelling and negative differential conductance in graphene transistors
journal, April 2013
- Britnell, L.; Gorbachev, R. V.; Geim, A. K.
- Nature Communications, Vol. 4, Issue 1
Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors
journal, November 2016
- Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng
- ACS Nano, Vol. 10, Issue 12
Temperature and field-dependent transport measurements in continuously tunable tantalum oxide memristors expose the dominant state variable
journal, March 2017
- Graves, Catherine E.; Dávila, Noraica; Merced-Grafals, Emmanuelle J.
- Applied Physics Letters, Vol. 110, Issue 12
Mott Memory and Neuromorphic Devices
journal, August 2015
- You Zhou, ; Ramanathan, Shriram
- Proceedings of the IEEE, Vol. 103, Issue 8
Chua Corsage Memristor Oscillator via Hopf Bifurcation
journal, April 2016
- Mannan, Zubaer Ibna; Choi, Hyuncheol; Kim, Hyongsuk
- International Journal of Bifurcation and Chaos, Vol. 26, Issue 04
Studies on the defect structure of α-Nb2O5
journal, January 1966
- Chen, W. K.; Swalin, R. A.
- Journal of Physics and Chemistry of Solids, Vol. 27, Issue 1
The phase transition in VO2 probed using x-ray, visible and infrared radiations
journal, February 2016
- Kumar, Suhas; Strachan, John Paul; Kilcoyne, A. L. David
- Applied Physics Letters, Vol. 108, Issue 7
Thermal instability—The precursor to switching in inhomogeneous thin films
journal, November 1979
- Shaw, M. P.
- IEEE Transactions on Electron Devices, Vol. 26, Issue 11
The mechanism of threshold switching in amorphous alloys
journal, April 1978
- Adler, David; Henisch, Heinz K.; Mott, Sir Nevill
- Reviews of Modern Physics, Vol. 50, Issue 2
Thermodynamic Properties of Niobium Oxides
journal, November 2010
- Jacob, K. T.; Shekhar, Chander; Vinay, M.
- Journal of Chemical & Engineering Data, Vol. 55, Issue 11
Effect of thermal insulation on the electrical characteristics of NbO x threshold switches
journal, February 2018
- Wang, Ziwen; Kumar, Suhas; Wong, H. -S. Philip
- Applied Physics Letters, Vol. 112, Issue 7
Stability and entropy production in electrical circuits
journal, July 1975
- Landauer, R.
- Journal of Statistical Physics, Vol. 13, Issue 1
Stability in the dissipative steady state
journal, November 1978
- Landauer, Rolf
- Physics Today, Vol. 31, Issue 11
Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices
journal, May 2012
- Pickett, Matthew D.; Stanley Williams, R.
- Nanotechnology, Vol. 23, Issue 21
Modeling the memristor with piecewise linear function: MODELING THE MEMRISTOR WITH PIECEWISE LINEAR FUNCTION
journal, March 2014
- Mu, Xiaomu; Yu, Juntang; Wang, Shuning
- International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 28, Issue 1
Physical model of threshold switching in NbO 2 based memristors
journal, January 2015
- Slesazeck, S.; Mähne, H.; Wylezich, H.
- RSC Advances, Vol. 5, Issue 124
Modeling the memristor with piecewise linear function: MODELING THE MEMRISTOR WITH PIECEWISE LINEAR FUNCTION
journal, March 2014
- Mu, Xiaomu; Yu, Juntang; Wang, Shuning
- International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 28, Issue 1
Thermal effects on switching of solids from an insulating to a conductive state
journal, January 1971
- Berglund, C. N.; Klein, N.
- Proceedings of the IEEE, Vol. 59, Issue 7
CCD-based thermoreflectance microscopy: principles and applications
journal, June 2009
- Farzaneh, M.; Maize, K.; Lüerßen, D.
- Journal of Physics D: Applied Physics, Vol. 42, Issue 14
CCD-based thermoreflectance microscopy: principles and applications
journal, June 2009
- Farzaneh, M.; Maize, K.; Lüerßen, D.
- Journal of Physics D: Applied Physics, Vol. 42, Issue 14
Current-controlled negative differential resistance due to Joule heating in TiO 2
journal, November 2011
- Alexandrov, A. S.; Bratkovsky, A. M.; Bridle, B.
- Applied Physics Letters, Vol. 99, Issue 20
A scalable neuristor built with Mott memristors
journal, December 2012
- Pickett, Matthew D.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley
- Nature Materials, Vol. 12, Issue 2
The metal-insulator transition of NbO 2 : An embedded Peierls instability
journal, June 2002
- Eyert, V.
- Europhysics Letters (EPL), Vol. 58, Issue 6
Physical origins of current and temperature controlled negative differential resistances in NbO2
journal, September 2017
- Kumar, Suhas; Wang, Ziwen; Davila, Noraica
- Nature Communications, Vol. 8, Issue 1
Physical origins of current and temperature controlled negative differential resistances in NbO2
journal, September 2017
- Kumar, Suhas; Wang, Ziwen; Davila, Noraica
- Nature Communications, Vol. 8, Issue 1
In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors
text, January 2015
- Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul
- arXiv
The metal-insulator transition of NbO 2 : An embedded Peierls instability
journal, June 2002
- Eyert, V.
- Europhysics Letters (EPL), Vol. 58, Issue 6
Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
journal, February 2016
- Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul
- Advanced Materials, Vol. 28, Issue 14
Stability in the dissipative steady state
journal, November 1978
- Landauer, Rolf
- Physics Today, Vol. 31, Issue 11
Heat capacity of VO2 single crystals
journal, April 1973
- Chandrashekhar, G. V.; Barros, H. L. C.; Honig, J. M.
- Materials Research Bulletin, Vol. 8, Issue 4
Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing
journal, August 2017
- Kumar, Suhas; Strachan, John Paul; Williams, R. Stanley
- Nature, Vol. 548, Issue 7667
Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices
journal, May 2012
- Pickett, Matthew D.; Stanley Williams, R.
- Nanotechnology, Vol. 23, Issue 21
Criteria for stability in bistable electrical devices with S‐ or Z‐shaped current voltage characteristic
journal, December 1995
- Wacker, A.; Schöll, E.
- Journal of Applied Physics, Vol. 78, Issue 12
Nonlinear Dynamics of a Locally-Active Memristor
journal, April 2015
- Ascoli, Alon; Slesazeck, Stefan; Mahne, Hannes
- IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 62, Issue 4
Threshold switching and electrical self-oscillation in niobium oxide films
journal, September 2016
- Liu, Xinjun; Li, Shuai; Nandi, Sanjoy Kumar
- Journal of Applied Physics, Vol. 120, Issue 12
Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches
journal, July 2014
- Sharma, Abhishek A.; Noman, Mohammad; Abdelmoula, Mohamed
- Advanced Functional Materials, Vol. 24, Issue 35
Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO 2
journal, July 2013
- Kumar, Suhas; Pickett, Matthew D.; Strachan, John Paul
- Advanced Materials, Vol. 25, Issue 42
Current-controlled negative differential resistance due to Joule heating in TiO 2
journal, November 2011
- Alexandrov, A. S.; Bratkovsky, A. M.; Bridle, B.
- Applied Physics Letters, Vol. 99, Issue 20
Thermodynamic Properties of Niobium Oxides
journal, November 2010
- Jacob, K. T.; Shekhar, Chander; Vinay, M.
- Journal of Chemical & Engineering Data, Vol. 55, Issue 11
In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors
journal, July 2015
- Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul
- Journal of Applied Physics, Vol. 118, Issue 3
Resonant tunnelling and negative differential conductance in graphene transistors
text, January 2013
- Britnell, L.; Gorbachev, R. V.; Geim, A. K.
- arXiv
Everything You Wish to Know About Memristors But Are Afraid to Ask
journal, June 2015
- Chua, L.
- Radioengineering, Vol. 24, Issue 2
Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing
journal, August 2017
- Kumar, Suhas; Strachan, John Paul; Williams, R. Stanley
- Nature, Vol. 548, Issue 7667
An accurate locally active memristor model for S-type negative differential resistance in NbO x
journal, January 2016
- Gibson, Gary A.; Musunuru, Srinitya; Zhang, Jiaming
- Applied Physics Letters, Vol. 108, Issue 2
Resonant tunnelling and negative differential conductance in graphene transistors
text, January 2013
- Britnell, L.; Gorbachev, R. V.; Geim, A. K.
- arXiv
In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors
text, January 2015
- Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul
- arXiv
Threshold switching and electrical self-oscillation in niobium oxide films
journal, September 2016
- Liu, Xinjun; Li, Shuai; Nandi, Sanjoy Kumar
- Journal of Applied Physics, Vol. 120, Issue 12
Emissivity-corrected infrared thermal pulse measurement on microscopic semiconductor targets
conference, March 2001
- Albright, Grant C.; Stump, James A.; Li, Chunpang
- Aerospace/Defense Sensing, Simulation, and Controls, SPIE Proceedings
Criteria for stability in bistable electrical devices with S‐ or Z‐shaped current voltage characteristic
journal, December 1995
- Wacker, A.; Schöll, E.
- Journal of Applied Physics, Vol. 78, Issue 12
Electrical conductivity in inhomogeneous media
conference, January 1978
- Landauer, Rolf
- AIP Conference Proceedings Vol. 40
Works referencing / citing this record:
Spontaneous current constriction in threshold switching devices
journal, April 2019
- Goodwill, Jonathan M.; Ramer, Georg; Li, Dasheng
- Nature Communications, Vol. 10, Issue 1
Spontaneous current constriction in threshold switching devices
journal, April 2019
- Goodwill, Jonathan M.; Ramer, Georg; Li, Dasheng
- Nature Communications, Vol. 10, Issue 1
Subthreshold firing in Mott nanodevices
journal, May 2019
- del Valle, Javier; Salev, Pavel; Tesler, Federico
- Nature, Vol. 569, Issue 7756
Summary of the Faraday Discussion on New memory paradigms: memristive phenomena and neuromorphic applications
journal, January 2019
- Williams, R. Stanley
- Faraday Discussions, Vol. 213
Origin of Current‐Controlled Negative Differential Resistance Modes and the Emergence of Composite Characteristics with High Complexity
journal, August 2019
- Li, Shuai; Liu, Xinjun; Nandi, Sanjoy Kumar
- Advanced Functional Materials, Vol. 29, Issue 44
Intrinsic limits of leakage current in self-heating-triggered threshold switches
journal, May 2019
- Wang, Ziwen; Kumar, Suhas; Williams, R. Stanley
- Applied Physics Letters, Vol. 114, Issue 18
Low‐Conductance and Multilevel CMOS‐Integrated Nanoscale Oxide Memristors
journal, November 2018
- Sheng, Xia; Graves, Catherine E.; Kumar, Suhas
- Advanced Electronic Materials, Vol. 5, Issue 9
Stable Metallic Enrichment in Conductive Filaments in TaO x ‐Based Resistive Switches Arising from Competing Diffusive Fluxes
journal, April 2019
- Ma, Yuanzhi; Goodwill, Jonathan M.; Li, Dasheng
- Advanced Electronic Materials, Vol. 5, Issue 7
Figures / Tables found in this record: