Comparing smoothing techniques for extracting MOSFET threshold voltage

Stankus, Christopher; Ahmed, Moinuddin

doi:10.1016/j.sse.2019.107744

Title: Comparing smoothing techniques for extracting MOSFET threshold voltage

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Abstract

Measurement noise acts as a barrier to the accurate calculation of threshold voltage by derivative-based extraction methods. We examined several smoothing techniques and their effects on measurement noise in threshold voltage extracted by the linear extrapolation method and the g_m/I_d method. We applied these techniques on a set of SiC power MOSFET devices before and after they had undergone accelerated thermal testing. The smoothing methods examined are least-squares polynomial fitting, low-pass filtering using Butterworth and Chebyshev fillers, and differential smoothing. These methods are compared by their shift in threshold voltage compared to unsmoothed data and their standard deviation among the measurements of each device. All methods performed poorly at smoothing when extracting via the g_m/I_d due to the large amounts of high-magnitude subthreshold noise, mostly tending to extract threshold voltages far below the expected value. Differential smoothing provided results closest to the expected value with an absolute shift of 1.2 V on average. The smoothing methods performed better with the LE method. On a failed device, all smoothing methods except polynomial smoothing preserved the large threshold voltage anomaly for four out of five measurements. These results show that choice of smoothing method, if used must be evaluated based on themore » device and extraction method.« less

Authors:

Stankus, Christopher ^[1]; Ahmed, Moinuddin ^[1]

Argonne National Lab. (ANL), Lemont, IL (United States)

Publication Date:: Fri Dec 13 00:00:00 EST 2019

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: PowerAmerica Institute; USDOE Office of Science (SC), Workforce Development for Teachers and Scientists (WDTS)

OSTI Identifier:: 1606521

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: Solid-State Electronics

Additional Journal Information:: Journal Volume: 164; Journal Issue: C; Journal ID: ISSN 0038-1101

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; MOSFETs; linear extrapolation method; smoothing techniques; statistical analysis; threshold voltage

Citation Formats


                    Stankus, Christopher, and Ahmed, Moinuddin. Comparing smoothing techniques for extracting MOSFET threshold voltage.  United States: N. p., 2019. 
Web.  doi:10.1016/j.sse.2019.107744.

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                    Stankus, Christopher, & Ahmed, Moinuddin. Comparing smoothing techniques for extracting MOSFET threshold voltage.  United States.  https://doi.org/10.1016/j.sse.2019.107744

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                    Stankus, Christopher, and Ahmed, Moinuddin. Fri .  
"Comparing smoothing techniques for extracting MOSFET threshold voltage".  United States.  https://doi.org/10.1016/j.sse.2019.107744.  https://www.osti.gov/servlets/purl/1606521.

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@article{osti_1606521,

  title        = {Comparing smoothing techniques for extracting MOSFET threshold voltage},

  author       = {Stankus, Christopher and Ahmed, Moinuddin},

  abstractNote = {Measurement noise acts as a barrier to the accurate calculation of threshold voltage by derivative-based extraction methods. We examined several smoothing techniques and their effects on measurement noise in threshold voltage extracted by the linear extrapolation method and the gm/Id method. We applied these techniques on a set of SiC power MOSFET devices before and after they had undergone accelerated thermal testing. The smoothing methods examined are least-squares polynomial fitting, low-pass filtering using Butterworth and Chebyshev fillers, and differential smoothing. These methods are compared by their shift in threshold voltage compared to unsmoothed data and their standard deviation among the measurements of each device. All methods performed poorly at smoothing when extracting via the gm/Id due to the large amounts of high-magnitude subthreshold noise, mostly tending to extract threshold voltages far below the expected value. Differential smoothing provided results closest to the expected value with an absolute shift of 1.2 V on average. The smoothing methods performed better with the LE method. On a failed device, all smoothing methods except polynomial smoothing preserved the large threshold voltage anomaly for four out of five measurements. These results show that choice of smoothing method, if used must be evaluated based on the device and extraction method.},

  doi          = {10.1016/j.sse.2019.107744},

  journal      = {Solid-State Electronics},

  number       = C,

  volume       = 164,

  place        = {United States},

  year         = {Fri Dec 13 00:00:00 EST 2019},

  month        = {Fri Dec 13 00:00:00 EST 2019}

}

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