Rigid Band Shifts in Two-Dimensional Semiconductors through External Dielectric Screening
Abstract
We investigate the effects of external dielectric screening on the electronic dispersion and the band gap in the atomically thin, quasi-two-dimensional (2D) semiconductor WS_{2} using angle-resolved photoemission and optical spectroscopies, along with first-principles calculations. We find the main effect of increased external dielectric screening to be a reduction of the quasiparticle band gap, with rigid shifts to the bands themselves. Specifically, the band gap of monolayer WS_{2} is decreased by about 140 meV on a graphite substrate as compared to a hexagonal boron nitride substrate, while the electronic dispersion of WS_{2} remains unchanged within our experimental precision of 17 meV. These essentially rigid shifts of the valence and conduction bands result from the special spatial structure of the changes in the Coulomb potential induced by the dielectric environment of the monolayer.
- Authors:
-
[1];
[2];
[5];
[6];
[1]
- Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). The Molecular Foundry (TMF); Univ. of California, Berkeley, CA (United States)
- Radboud Univ., Nijmegen (Netherlands)
- Univ. of Bremen (Germany)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- National Inst. for Materials Science, Tsukuba, Ibaraki (Japan)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); German Research Foundation (DFG); Ministry of Education, Culture, Sports, Science and Technology (MEXT) (Japan); Japan Society for the Promotion of Science (JSPS); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
- OSTI Identifier:
- 1596965
- Alternate Identifier(s):
- OSTI ID: 1604711
- Report Number(s):
- arXiv: 1907.05535v1
Journal ID: ISSN 0031-9007; PRLTAO; TRN: US2102932
- Grant/Contract Number:
- AC02-76SF00515; AC02-05CH11231; GBMF4545; DMR-1708457; GRK-2247; JPMJCR15F3
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 123; Journal Issue: 20; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE
Citation Formats
Waldecker, Lutz, Raja, Archana, Rösner, Malte, Steinke, Christina, Bostwick, Aaron, Koch, Roland J., Jozwiak, Chris, Taniguchi, Takashi, Watanabe, Kenji, Rotenberg, Eli, Wehling, Tim O., and Heinz, Tony F. Rigid Band Shifts in Two-Dimensional Semiconductors through External Dielectric Screening. United States: N. p., 2019.
Web. doi:10.1103/PhysRevLett.123.206403.
Waldecker, Lutz, Raja, Archana, Rösner, Malte, Steinke, Christina, Bostwick, Aaron, Koch, Roland J., Jozwiak, Chris, Taniguchi, Takashi, Watanabe, Kenji, Rotenberg, Eli, Wehling, Tim O., & Heinz, Tony F. Rigid Band Shifts in Two-Dimensional Semiconductors through External Dielectric Screening. United States. https://doi.org/10.1103/PhysRevLett.123.206403
Waldecker, Lutz, Raja, Archana, Rösner, Malte, Steinke, Christina, Bostwick, Aaron, Koch, Roland J., Jozwiak, Chris, Taniguchi, Takashi, Watanabe, Kenji, Rotenberg, Eli, Wehling, Tim O., and Heinz, Tony F. Wed .
"Rigid Band Shifts in Two-Dimensional Semiconductors through External Dielectric Screening". United States. https://doi.org/10.1103/PhysRevLett.123.206403. https://www.osti.gov/servlets/purl/1596965.
@article{osti_1596965,
title = {Rigid Band Shifts in Two-Dimensional Semiconductors through External Dielectric Screening},
author = {Waldecker, Lutz and Raja, Archana and Rösner, Malte and Steinke, Christina and Bostwick, Aaron and Koch, Roland J. and Jozwiak, Chris and Taniguchi, Takashi and Watanabe, Kenji and Rotenberg, Eli and Wehling, Tim O. and Heinz, Tony F.},
abstractNote = {We investigate the effects of external dielectric screening on the electronic dispersion and the band gap in the atomically thin, quasi-two-dimensional (2D) semiconductor WS_{2} using angle-resolved photoemission and optical spectroscopies, along with first-principles calculations. We find the main effect of increased external dielectric screening to be a reduction of the quasiparticle band gap, with rigid shifts to the bands themselves. Specifically, the band gap of monolayer WS_{2} is decreased by about 140 meV on a graphite substrate as compared to a hexagonal boron nitride substrate, while the electronic dispersion of WS_{2} remains unchanged within our experimental precision of 17 meV. These essentially rigid shifts of the valence and conduction bands result from the special spatial structure of the changes in the Coulomb potential induced by the dielectric environment of the monolayer.},
doi = {10.1103/PhysRevLett.123.206403},
journal = {Physical Review Letters},
number = 20,
volume = 123,
place = {United States},
year = {Wed Nov 13 00:00:00 EST 2019},
month = {Wed Nov 13 00:00:00 EST 2019}
}
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Works referencing / citing this record:
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