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Title: Sensitization of silicon by singlet exciton fission in tetracene

Abstract

Silicon dominates contemporary solar cell technologies. Yet when absorbing photons, silicon (like other semiconductors) wastes energy in excess of its bandgap. Reducing these thermalization losses and enabling better sensitivity to light is possible by sensitizing the silicon solar cell using singlet exciton fission, in which two excited states with triplet spin character (triplet excitons) are generated from a photoexcited state of higher energy with singlet spin character (a singlet exciton). Singlet exciton fission in the molecular semiconductor tetracene is known to generate triplet excitons that are energetically matched to the silicon bandgap. When the triplet excitons are transferred to silicon they create additional electron–hole pairs, promising to increase cell efficiencies from the single-junction limit of 29 per cent to as high as 35 per cent. In this report we reduce the thickness of the protective hafnium oxynitride layer at the surface of a silicon solar cell to just eight angstroms, using electric-field-effect passivation to enable the efficient energy transfer of the triplet excitons formed in the tetracene. The maximum combined yield of the fission in tetracene and the energy transfer to silicon is around 133 per cent, establishing the potential of singlet exciton fission to increase the efficiencies of siliconmore » solar cells and reduce the cost of the energy that they generate.« less

Authors:
 [1];  [1];  [1];  [2];  [1];  [1];  [1];  [3];  [2];  [1];  [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  2. Princeton Univ., NJ (United States)
  3. Harvard Univ., Cambridge, MA (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE); Princeton Univ., NJ (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)
OSTI Identifier:
1595459
Grant/Contract Number:  
SC0012458; SC0001088; DGE-1656466
Resource Type:
Accepted Manuscript
Journal Name:
Nature (London)
Additional Journal Information:
Journal Name: Nature (London); Journal Volume: 571; Journal Issue: 7763; Journal ID: ISSN 0028-0836
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Einzinger, Markus, Wu, Tony, Kompalla, Julia F., Smith, Hannah L., Perkinson, Collin F., Nienhaus, Lea, Wieghold, Sarah, Congreve, Daniel N., Kahn, Antoine, Bawendi, Moungi G., and Baldo, Marc A. Sensitization of silicon by singlet exciton fission in tetracene. United States: N. p., 2019. Web. doi:10.1038/s41586-019-1339-4.
Einzinger, Markus, Wu, Tony, Kompalla, Julia F., Smith, Hannah L., Perkinson, Collin F., Nienhaus, Lea, Wieghold, Sarah, Congreve, Daniel N., Kahn, Antoine, Bawendi, Moungi G., & Baldo, Marc A. Sensitization of silicon by singlet exciton fission in tetracene. United States. https://doi.org/10.1038/s41586-019-1339-4
Einzinger, Markus, Wu, Tony, Kompalla, Julia F., Smith, Hannah L., Perkinson, Collin F., Nienhaus, Lea, Wieghold, Sarah, Congreve, Daniel N., Kahn, Antoine, Bawendi, Moungi G., and Baldo, Marc A. Wed . "Sensitization of silicon by singlet exciton fission in tetracene". United States. https://doi.org/10.1038/s41586-019-1339-4. https://www.osti.gov/servlets/purl/1595459.
@article{osti_1595459,
title = {Sensitization of silicon by singlet exciton fission in tetracene},
author = {Einzinger, Markus and Wu, Tony and Kompalla, Julia F. and Smith, Hannah L. and Perkinson, Collin F. and Nienhaus, Lea and Wieghold, Sarah and Congreve, Daniel N. and Kahn, Antoine and Bawendi, Moungi G. and Baldo, Marc A.},
abstractNote = {Silicon dominates contemporary solar cell technologies. Yet when absorbing photons, silicon (like other semiconductors) wastes energy in excess of its bandgap. Reducing these thermalization losses and enabling better sensitivity to light is possible by sensitizing the silicon solar cell using singlet exciton fission, in which two excited states with triplet spin character (triplet excitons) are generated from a photoexcited state of higher energy with singlet spin character (a singlet exciton). Singlet exciton fission in the molecular semiconductor tetracene is known to generate triplet excitons that are energetically matched to the silicon bandgap. When the triplet excitons are transferred to silicon they create additional electron–hole pairs, promising to increase cell efficiencies from the single-junction limit of 29 per cent to as high as 35 per cent. In this report we reduce the thickness of the protective hafnium oxynitride layer at the surface of a silicon solar cell to just eight angstroms, using electric-field-effect passivation to enable the efficient energy transfer of the triplet excitons formed in the tetracene. The maximum combined yield of the fission in tetracene and the energy transfer to silicon is around 133 per cent, establishing the potential of singlet exciton fission to increase the efficiencies of silicon solar cells and reduce the cost of the energy that they generate.},
doi = {10.1038/s41586-019-1339-4},
journal = {Nature (London)},
number = 7763,
volume = 571,
place = {United States},
year = {Wed Jul 03 00:00:00 EDT 2019},
month = {Wed Jul 03 00:00:00 EDT 2019}
}

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Cited by: 171 works
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Figures / Tables:

Figure 1 Figure 1: Illustrating the concept of down conversion and the materials employed in this study. a) The solar spectrum. The green area indicates the power density that can be harvested in conventional silicon solar cells, the blue area indicates possible gains from employing singlet fission materials as downconverters. b) Processes:more » 1) Light absorption. 2) Singlet Fission. 3) Energy transfer. 4) Hole and electron extraction. c) Molecular structure of tetracene. d) Energetic structure of the system as determined from ultraviolet photon spectroscopy as described in the SI (Fig. S6-S9). The green line at the Si surface indicates the possibility of a monolayer oxide coating formed immediately after surface cleaning.« less

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