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Title: Kinetic Simulations of Cu Doping in Chlorinated CdSeTe PV Absorbers

Abstract

This paper reports on 1D kinetic modeling of p-type doping formation in Cu-doped chlorinated CdSeTe photovoltaic (PV) absorbers with graded Se profiles. Following the recent progress in kinetic simulations of the defect chemistry in stoichiometric CdTe films, this work extends simulation capabilities to a domain of semiconductor alloy films with graded stoichiometries. The defect formation energies and ionization levels, as well as the diffusion and reaction barriers used in the reaction-diffusion equations are calculated from the first principles. A new formalism is employed to account for the uncertainty of the defect formation energies in semiconductor alloys caused by unknown local surrounding. Finally, the developed methodology is used to model a practical fabrication process of p-type doping formation in graded CdSeTe absorbers and to study the effect of alloy stoichiometry on the doping activation.

Authors:
ORCiD logo [1];  [1]
  1. First Solar, Inc., Perrysburg, OH (United States)
Publication Date:
Research Org.:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1592014
Alternate Identifier(s):
OSTI ID: 1503064
Grant/Contract Number:  
EE0007536; EE0006344
Resource Type:
Accepted Manuscript
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Volume: 216; Journal Issue: 15; Journal ID: ISSN 1862-6300
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; Cu doping; CdTe; Solar Cells; Absorbers; defect chemistry; kinetic simulations; thin‐film photovoltaics

Citation Formats

Sankin, Igor, and Krasikov, Dmitry. Kinetic Simulations of Cu Doping in Chlorinated CdSeTe PV Absorbers. United States: N. p., 2019. Web. doi:10.1002/pssa.201800887.
Sankin, Igor, & Krasikov, Dmitry. Kinetic Simulations of Cu Doping in Chlorinated CdSeTe PV Absorbers. United States. https://doi.org/10.1002/pssa.201800887
Sankin, Igor, and Krasikov, Dmitry. Tue . "Kinetic Simulations of Cu Doping in Chlorinated CdSeTe PV Absorbers". United States. https://doi.org/10.1002/pssa.201800887. https://www.osti.gov/servlets/purl/1592014.
@article{osti_1592014,
title = {Kinetic Simulations of Cu Doping in Chlorinated CdSeTe PV Absorbers},
author = {Sankin, Igor and Krasikov, Dmitry},
abstractNote = {This paper reports on 1D kinetic modeling of p-type doping formation in Cu-doped chlorinated CdSeTe photovoltaic (PV) absorbers with graded Se profiles. Following the recent progress in kinetic simulations of the defect chemistry in stoichiometric CdTe films, this work extends simulation capabilities to a domain of semiconductor alloy films with graded stoichiometries. The defect formation energies and ionization levels, as well as the diffusion and reaction barriers used in the reaction-diffusion equations are calculated from the first principles. A new formalism is employed to account for the uncertainty of the defect formation energies in semiconductor alloys caused by unknown local surrounding. Finally, the developed methodology is used to model a practical fabrication process of p-type doping formation in graded CdSeTe absorbers and to study the effect of alloy stoichiometry on the doping activation.},
doi = {10.1002/pssa.201800887},
journal = {Physica Status Solidi. A, Applications and Materials Science},
number = 15,
volume = 216,
place = {United States},
year = {Tue Mar 26 00:00:00 EDT 2019},
month = {Tue Mar 26 00:00:00 EDT 2019}
}

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Free Publicly Available Full Text
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Cited by: 14 works
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Works referencing / citing this record:

Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures
journal, December 2019

  • Kuciauskas, Darius; Moseley, John; Ščajev, Patrik
  • physica status solidi (RRL) – Rapid Research Letters, Vol. 14, Issue 3
  • DOI: 10.1002/pssr.201900606

Machine-learned impurity level prediction for semiconductors: the example of Cd-based chalcogenides
journal, April 2020

  • Mannodi-Kanakkithodi, Arun; Toriyama, Michael Y.; Sen, Fatih G.
  • npj Computational Materials, Vol. 6, Issue 1
  • DOI: 10.1038/s41524-020-0296-7

Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures
journal, January 2020

  • Kuciauskas, Darius; Moseley, John; Ščajev, Patrik
  • physica status solidi (RRL) – Rapid Research Letters, Vol. 14, Issue 3
  • DOI: 10.1002/pssr.202070016