Using Atom-Probe Tomography to Understand Schottky Diodes
Abstract
In this work, we use electronic transport and atom-probe tomography to study ZnO:Al=SiO2=Si Schottky diodes on lightly doped n- and p-type Si. We vary the carrier concentration in the ZnO:Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography shows that Al segregates to the interface, so that the ZnO:Al at the junction is likely to be metallic even when the bulk of the ZnO:Al film is semiconducting. We hypothesize that the observed Fermi-level pinning is connected to the insulator-metal transition in doped ZnO. In conclusion, this implies that tuning the band alignment at oxide/Si interfaces may be achieved by controlling the transition between localized and extended states in the oxide, thereby changing the orbital hybridization across the interface.
- Authors:
-
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Harvard Univ., Cambridge, MA (United States)
- Harvard Univ., Cambridge, MA (United States); Purdue Univ., West Lafayette, IN (United States)
- Publication Date:
- Research Org.:
- Stanford Univ., CA (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1579857
- Alternate Identifier(s):
- OSTI ID: 1326861
- Grant/Contract Number:
- EE0004946
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Applied
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 3; Journal ID: ISSN 2331-7019
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Jaramillo, R., Youssef, Amanda, Akey, Austin, Schoofs, Frank, Ramanathan, Shriram, and Buonassisi, Tonio. Using Atom-Probe Tomography to Understand ZnO:Al/SiO2/Si Schottky Diodes. United States: N. p., 2016.
Web. doi:10.1103/PhysRevApplied.6.034016.
Jaramillo, R., Youssef, Amanda, Akey, Austin, Schoofs, Frank, Ramanathan, Shriram, & Buonassisi, Tonio. Using Atom-Probe Tomography to Understand ZnO:Al/SiO2/Si Schottky Diodes. United States. https://doi.org/10.1103/PhysRevApplied.6.034016
Jaramillo, R., Youssef, Amanda, Akey, Austin, Schoofs, Frank, Ramanathan, Shriram, and Buonassisi, Tonio. Mon .
"Using Atom-Probe Tomography to Understand ZnO:Al/SiO2/Si Schottky Diodes". United States. https://doi.org/10.1103/PhysRevApplied.6.034016. https://www.osti.gov/servlets/purl/1579857.
@article{osti_1579857,
title = {Using Atom-Probe Tomography to Understand ZnO:Al/SiO2/Si Schottky Diodes},
author = {Jaramillo, R. and Youssef, Amanda and Akey, Austin and Schoofs, Frank and Ramanathan, Shriram and Buonassisi, Tonio},
abstractNote = {In this work, we use electronic transport and atom-probe tomography to study ZnO:Al=SiO2=Si Schottky diodes on lightly doped n- and p-type Si. We vary the carrier concentration in the ZnO:Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography shows that Al segregates to the interface, so that the ZnO:Al at the junction is likely to be metallic even when the bulk of the ZnO:Al film is semiconducting. We hypothesize that the observed Fermi-level pinning is connected to the insulator-metal transition in doped ZnO. In conclusion, this implies that tuning the band alignment at oxide/Si interfaces may be achieved by controlling the transition between localized and extended states in the oxide, thereby changing the orbital hybridization across the interface.},
doi = {10.1103/PhysRevApplied.6.034016},
journal = {Physical Review Applied},
number = 3,
volume = 6,
place = {United States},
year = {Mon Sep 26 00:00:00 EDT 2016},
month = {Mon Sep 26 00:00:00 EDT 2016}
}
Web of Science
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