Strain tolerance of two-dimensional crystal growth on curved surfaces
Abstract
Two-dimensional (2D) crystal growth over substrate features is fundamentally guided by the Gauss-Bonnet theorem which mandates that rigid, planar crystals cannot conform to surfaces with nonzero Gaussian curvature. Here we reveal how topographic curvature of lithographically-designed substrate features govern the strain and growth dynamics of triangular WS2 monolayer single crystals. Single crystals grow conformally without strain over deep trenches and other features with zero Gaussian curvature, however features with nonzero Gaussian curvature can easily impart sufficient strain to initiate grain boundaries and fractured growth in different directions. Within a strain tolerant regime, however, triangular single crystals can accommodate considerable (< 1.1%) localized strain exerted by surface features that shift the band gap up to 150 meV. Within this regime the crystal growth accelerates in specific directions, which we describe using a growth model. These results present a novel strategy to strain-engineer the growth directions and optoelectronic properties of 2D crystals.
- Authors:
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[1];
[1];
[1];
[1];
[3];
[3];
[5];
[6];
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[6];
[1]
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science
- Nanjing Univ. of Aeronautics and Astronautics, Nanjing (China). College of Aerospace Engineering
- Rice Univ., Houston, TX (United States). Dept. of Materials Science and NanoEngineering
- Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science; Auburn Univ., Auburn, AL (United States). Dept. of Electrical and Computer Engineering
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Div.
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1574020
- Alternate Identifier(s):
- OSTI ID: 1607203
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Science Advances
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 5; Journal ID: ISSN 2375-2548
- Publisher:
- AAAS
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Wang, Kai, Puretzky, Alexander A., Hu, Zhili, Srijanto, Bernadeta R., Li, Xufan, Gupta, Nitant, Yu, Henry, Tian, Mengkun, Mahjouri-Samani, Masoud, Gao, Xiang, Oyedele, Akinola, Rouleau, Christopher M., Eres, Gyula, Yakobson, Boris I., Yoon, Mina, Xiao, Kai, and Geohegan, David B. Strain tolerance of two-dimensional crystal growth on curved surfaces. United States: N. p., 2019.
Web. doi:10.1126/sciadv.aav4028.
Wang, Kai, Puretzky, Alexander A., Hu, Zhili, Srijanto, Bernadeta R., Li, Xufan, Gupta, Nitant, Yu, Henry, Tian, Mengkun, Mahjouri-Samani, Masoud, Gao, Xiang, Oyedele, Akinola, Rouleau, Christopher M., Eres, Gyula, Yakobson, Boris I., Yoon, Mina, Xiao, Kai, & Geohegan, David B. Strain tolerance of two-dimensional crystal growth on curved surfaces. United States. https://doi.org/10.1126/sciadv.aav4028
Wang, Kai, Puretzky, Alexander A., Hu, Zhili, Srijanto, Bernadeta R., Li, Xufan, Gupta, Nitant, Yu, Henry, Tian, Mengkun, Mahjouri-Samani, Masoud, Gao, Xiang, Oyedele, Akinola, Rouleau, Christopher M., Eres, Gyula, Yakobson, Boris I., Yoon, Mina, Xiao, Kai, and Geohegan, David B. Fri .
"Strain tolerance of two-dimensional crystal growth on curved surfaces". United States. https://doi.org/10.1126/sciadv.aav4028. https://www.osti.gov/servlets/purl/1574020.
@article{osti_1574020,
title = {Strain tolerance of two-dimensional crystal growth on curved surfaces},
author = {Wang, Kai and Puretzky, Alexander A. and Hu, Zhili and Srijanto, Bernadeta R. and Li, Xufan and Gupta, Nitant and Yu, Henry and Tian, Mengkun and Mahjouri-Samani, Masoud and Gao, Xiang and Oyedele, Akinola and Rouleau, Christopher M. and Eres, Gyula and Yakobson, Boris I. and Yoon, Mina and Xiao, Kai and Geohegan, David B.},
abstractNote = {Two-dimensional (2D) crystal growth over substrate features is fundamentally guided by the Gauss-Bonnet theorem which mandates that rigid, planar crystals cannot conform to surfaces with nonzero Gaussian curvature. Here we reveal how topographic curvature of lithographically-designed substrate features govern the strain and growth dynamics of triangular WS2 monolayer single crystals. Single crystals grow conformally without strain over deep trenches and other features with zero Gaussian curvature, however features with nonzero Gaussian curvature can easily impart sufficient strain to initiate grain boundaries and fractured growth in different directions. Within a strain tolerant regime, however, triangular single crystals can accommodate considerable (< 1.1%) localized strain exerted by surface features that shift the band gap up to 150 meV. Within this regime the crystal growth accelerates in specific directions, which we describe using a growth model. These results present a novel strategy to strain-engineer the growth directions and optoelectronic properties of 2D crystals.},
doi = {10.1126/sciadv.aav4028},
journal = {Science Advances},
number = 5,
volume = 5,
place = {United States},
year = {Fri May 31 00:00:00 EDT 2019},
month = {Fri May 31 00:00:00 EDT 2019}
}
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