Transport properties of topologically non-trivial bismuth tellurobromides BinTeBr
Abstract
Temperature-dependent transport properties of the recently discovered layered bismuth-rich tellurobromides BinTeBr (n=2, 3) are explored for the first time. Dense homogeneous polycrystalline specimens prepared for different electrical and thermal measurements were synthesized by a ball milling-based process. While the calculated electronic structure classifies Bi2TeBr as a semimetal with a small electron pocket, its transport properties demonstrate a semiconductorlike behavior. Additional bismuth bilayers in the Bi3TeBr crystal structure strengthens the interlayer chemical bonding thus leading to metallic conduction. The thermal conductivity of the semiconducting compositions is low, and the electrical properties are sensitive to doping with a factor of four reduction in resistivity observed at room temperature for only 3% Pb doping. Investigation of the thermoelectric properties suggests that optimization for thermoelectrics may depend on particular elemental substitution. The findings introduced are intended to expand on the research into tellurohalides in order to further advance the fundamental investigation of these materials, as well as investigate their potential for thermoelectric applications.
- Authors:
-
[3];
[4];
[7];
- Dresden Univ. of Technology (Germany); Univ. of South Florida, Tampa, FL (United States)
- Univ. of South Florida, Tampa, FL (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Tomsk State Univ. (Russian Federation); Donostia International Physics Center (DIPC), Basque Country (Spain); Saint Petersburg State Univ. (Russian Federation)
- Donostia International Physics Center (DIPC), Basque Country (Spain); Saint Petersburg State Univ. (Russian Federation); Univ. of the Basque Country, Donostia (Spain)
- National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
- Dresden Univ. of Technology (Germany); Max Planck Society, Dresden (Germany)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Vehicle Technologies Office (EE-3V); National Science Foundation (NSF); German Research Foundation (DFG)
- OSTI Identifier:
- 1564168
- Grant/Contract Number:
- AC05-00OR22725; DMR-1748188
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 126; Journal Issue: 10; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Pabst, Falk, Hobbis, Dean, Alzahrani, Noha, Wang, Hsin, Rusinov, I. P., Chulkov, E. V., Martin, Joshua, Ruck, Michael, and Nolas, George S. Transport properties of topologically non-trivial bismuth tellurobromides BinTeBr. United States: N. p., 2019.
Web. doi:10.1063/1.5116369.
Pabst, Falk, Hobbis, Dean, Alzahrani, Noha, Wang, Hsin, Rusinov, I. P., Chulkov, E. V., Martin, Joshua, Ruck, Michael, & Nolas, George S. Transport properties of topologically non-trivial bismuth tellurobromides BinTeBr. United States. https://doi.org/10.1063/1.5116369
Pabst, Falk, Hobbis, Dean, Alzahrani, Noha, Wang, Hsin, Rusinov, I. P., Chulkov, E. V., Martin, Joshua, Ruck, Michael, and Nolas, George S. Mon .
"Transport properties of topologically non-trivial bismuth tellurobromides BinTeBr". United States. https://doi.org/10.1063/1.5116369. https://www.osti.gov/servlets/purl/1564168.
@article{osti_1564168,
title = {Transport properties of topologically non-trivial bismuth tellurobromides BinTeBr},
author = {Pabst, Falk and Hobbis, Dean and Alzahrani, Noha and Wang, Hsin and Rusinov, I. P. and Chulkov, E. V. and Martin, Joshua and Ruck, Michael and Nolas, George S.},
abstractNote = {Temperature-dependent transport properties of the recently discovered layered bismuth-rich tellurobromides BinTeBr (n=2, 3) are explored for the first time. Dense homogeneous polycrystalline specimens prepared for different electrical and thermal measurements were synthesized by a ball milling-based process. While the calculated electronic structure classifies Bi2TeBr as a semimetal with a small electron pocket, its transport properties demonstrate a semiconductorlike behavior. Additional bismuth bilayers in the Bi3TeBr crystal structure strengthens the interlayer chemical bonding thus leading to metallic conduction. The thermal conductivity of the semiconducting compositions is low, and the electrical properties are sensitive to doping with a factor of four reduction in resistivity observed at room temperature for only 3% Pb doping. Investigation of the thermoelectric properties suggests that optimization for thermoelectrics may depend on particular elemental substitution. The findings introduced are intended to expand on the research into tellurohalides in order to further advance the fundamental investigation of these materials, as well as investigate their potential for thermoelectric applications.},
doi = {10.1063/1.5116369},
journal = {Journal of Applied Physics},
number = 10,
volume = 126,
place = {United States},
year = {Mon Sep 09 00:00:00 EDT 2019},
month = {Mon Sep 09 00:00:00 EDT 2019}
}
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