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Title: Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

Abstract

Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1–unit cell (UC) limit. The ferroelectric transition temperature Tc of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature. The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.

Authors:
 [1];  [2];  [1];  [1];  [1];  [3];  [3];  [1];  [1];  [1];  [4];  [5];  [1];  [1];  [6]
  1. Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
  2. Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  3. Renmin Univ. of China, Beijing (China)
  4. Renmin Univ. of China, Beijing (China); Collaborative Innovation Center of Advanced Microstructures, Shanghai (China)
  5. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  6. Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Inst. of Physical and Chemical Research (RIKEN), Wako (Japan)
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1557590
Grant/Contract Number:  
SC0010526
Resource Type:
Accepted Manuscript
Journal Name:
Science
Additional Journal Information:
Journal Volume: 353; Journal Issue: 6296; Journal ID: ISSN 0036-8075
Publisher:
AAAS
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Chang, Kai, Liu, Junwei, Lin, Haicheng, Wang, Na, Zhao, Kun, Zhang, Anmin, Jin, Feng, Zhong, Yong, Hu, Xiaopeng, Duan, Wenhui, Zhang, Qingming, Fu, Liang, Xue, Qi-Kun, Chen, Xi, and Ji, Shuai-Hua. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. United States: N. p., 2016. Web. doi:10.1126/science.aad8609.
Chang, Kai, Liu, Junwei, Lin, Haicheng, Wang, Na, Zhao, Kun, Zhang, Anmin, Jin, Feng, Zhong, Yong, Hu, Xiaopeng, Duan, Wenhui, Zhang, Qingming, Fu, Liang, Xue, Qi-Kun, Chen, Xi, & Ji, Shuai-Hua. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. United States. https://doi.org/10.1126/science.aad8609
Chang, Kai, Liu, Junwei, Lin, Haicheng, Wang, Na, Zhao, Kun, Zhang, Anmin, Jin, Feng, Zhong, Yong, Hu, Xiaopeng, Duan, Wenhui, Zhang, Qingming, Fu, Liang, Xue, Qi-Kun, Chen, Xi, and Ji, Shuai-Hua. Fri . "Discovery of robust in-plane ferroelectricity in atomic-thick SnTe". United States. https://doi.org/10.1126/science.aad8609. https://www.osti.gov/servlets/purl/1557590.
@article{osti_1557590,
title = {Discovery of robust in-plane ferroelectricity in atomic-thick SnTe},
author = {Chang, Kai and Liu, Junwei and Lin, Haicheng and Wang, Na and Zhao, Kun and Zhang, Anmin and Jin, Feng and Zhong, Yong and Hu, Xiaopeng and Duan, Wenhui and Zhang, Qingming and Fu, Liang and Xue, Qi-Kun and Chen, Xi and Ji, Shuai-Hua},
abstractNote = {Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1–unit cell (UC) limit. The ferroelectric transition temperature Tc of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature. The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.},
doi = {10.1126/science.aad8609},
journal = {Science},
number = 6296,
volume = 353,
place = {United States},
year = {Fri Jul 15 00:00:00 EDT 2016},
month = {Fri Jul 15 00:00:00 EDT 2016}
}

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Structural, Electronic and Thermoelectric Properties of Pb1−xSnxTe Alloys
journal, October 2019

  • Pandit, Abhiyan; Haleoot, Raad; Hamad, Bothina
  • Journal of Electronic Materials, Vol. 49, Issue 1
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Normal-to-topological insulator martensitic phase transition in group-IV monochalcogenides driven by light
journal, January 2020


Two-dimensional materials with piezoelectric and ferroelectric functionalities
journal, June 2018


Black phosphorus and its isoelectronic materials
journal, April 2019


Monolayer AgBiP 2 Se 6 : an atomically thin ferroelectric semiconductor with out-plane polarization
journal, January 2017


Two-dimensional ferroelectricity and switchable spin-textures in ultra-thin elemental Te multilayers
journal, January 2018

  • Wang, Yao; Xiao, Chengcheng; Chen, Miaogen
  • Materials Horizons, Vol. 5, Issue 3
  • DOI: 10.1039/c8mh00082d

Unconventional two-dimensional germanium dichalcogenides
journal, January 2018

  • Wang, Jiangjing; Ronneberger, Ider; Zhou, Ling
  • Nanoscale, Vol. 10, Issue 16
  • DOI: 10.1039/c8nr01747f

Fluorination observed T c increase of 110 K is challenging the hydrogen–deuterium isotope effect
journal, January 2019

  • Liu, Yu-Ling; Lu, Si-Qi; Tang, Yuan-Yuan
  • Chemical Communications, Vol. 55, Issue 67
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Modulating the electronic structures of blue phosphorene towards spintronics
journal, January 2019

  • Lu, Xiang-Qian; Wang, Chuan-Kui; Fu, Xiao-Xiao
  • Physical Chemistry Chemical Physics, Vol. 21, Issue 22
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Two-dimensional ferromagnetism and driven ferroelectricity in van der Waals CuCrP 2 S 6
journal, January 2019

  • Lai, Youfang; Song, Zhigang; Wan, Yi
  • Nanoscale, Vol. 11, Issue 12
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Two-dimensional multiferroic semiconductors with coexisting ferroelectricity and ferromagnetism
journal, July 2018

  • Qi, Jingshan; Wang, Hua; Chen, Xiaofang
  • Applied Physics Letters, Vol. 113, Issue 4
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The coexistence of ferroelectricity and topological phase transition in monolayer α -In 2 Se 3 under strain engineering
journal, December 2019

  • Jiang, Xingxing; Feng, Yexin; Chen, Ke-Qiu
  • Journal of Physics: Condensed Matter, Vol. 32, Issue 10
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Recent progress in 2D group IV–IV monochalcogenides: synthesis, properties and applications
journal, April 2019


Shift-current bulk photovoltaic effect influenced by quasiparticle and exciton
journal, January 2020


Photostrictive Two-Dimensional Materials in the Monochalcogenide Family
journal, May 2017


Room temperature in-plane ferroelectricity in van der Waals In 2 Se 3
journal, July 2018


Ferroicity-driven nonlinear photocurrent switching in time-reversal invariant ferroic materials
journal, August 2019


Ferroelectric chalcogenides—materials at the edge
journal, July 2016


Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement
journal, April 2020


Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation
journal, January 2018

  • Higashitarumizu, Naoki; Kawamoto, Hayami; Nakamura, Masaru
  • Nanoscale, Vol. 10, Issue 47
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A two-dimensional robust topological insulator with coexisting ferroelectric and valley polarization
journal, January 2019

  • Hu, Xing-kai; Pang, Zhao-xia; Zhang, Chang-wen
  • Journal of Materials Chemistry C, Vol. 7, Issue 30
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Atomic-scale mapping of interface reconstructions in multiferroic heterostructures
journal, December 2018

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  • Applied Physics Reviews, Vol. 5, Issue 4
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Emergence of the giant out-of-plane Rashba effect and tunable nanoscale persistent spin helix in ferroelectric SnTe thin films
journal, January 2020

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  • Applied Physics Letters, Vol. 116, Issue 2
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Off-plane polarization ordering in metal chalcogen diphosphates from bulk to monolayer
journal, December 2017


Quasi-one-dimensional ferroelectricity and piezoelectricity in WO X 4 halogens
journal, November 2019


Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement
text, January 2020


Elemental Ferroelectricity and Antiferroelectricity in Group-V Monolayer
journal, February 2018

  • Xiao, Chengcheng; Wang, Fang; Yang, Shengyuan A.
  • Advanced Functional Materials, Vol. 28, Issue 17
  • DOI: 10.1002/adfm.201707383

Growth of atomically thick transition metal sulfide filmson graphene/6H-SiC(0001) by molecular beam epitaxy
journal, April 2018


Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
journal, August 2018


In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects
journal, January 2020

  • Zhao, Siwen; Dong, Baojuan; Wang, Huide
  • Nanoscale Advances, Vol. 2, Issue 1
  • DOI: 10.1039/c9na00623k

Quantitative relationship between polarization differences and the zone-averaged shift photocurrent
text, January 2017


On the origin of magnetic anisotropy in two dimensional CrI$_3$
text, January 2017


Tuning the ferro- to para-electric transition temperature and dipole orientation of group-IV monochalcogenide monolayers
text, January 2017


Giant spin Hall Effect in two-dimensional monochalcogenides
text, January 2018


Frustrated Dipole Order Induces Noncollinear Proper Ferrielectricity in Two Dimensions
text, January 2019


Tunable Topological Energy Bands in 2D Dialkali-Metal Monoxides
text, January 2019


Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
journal, August 2018


Prediction of ferroelectricity-driven Berry curvature enabling charge- and spin-controllable photocurrent in tin telluride monolayers
journal, September 2019


Angle-resolved photoemission spectroscopy for the study of two-dimensional materials
journal, March 2017


Water splits to degrade two-dimensional group-IV monochalcogenides in nanoseconds
text, January 2018