Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO3/SrTiO3 Interface Structures
Abstract
The two dimensional conducting gas that forms at the interface between the two insulators LaAlO3 (LAO) and SrTiO3 (STO)1, 2 has garnered a lot of attention due to wide variety of physical phenomena that it exhibits, including strong spin–orbit coupling,3, 4 superconductivity,5-8 magnetism,7-12 and localization effects,13 among others. From the earliest studies,1 it has been well established that the conditions during film growth or the post-growth treatment of samples can have a substantial effect on the properties of the interface. In particular, the amount of oxygen vacancies introduced during growth or through post-growth treatment can change the conductance of the LAO/STO interface by orders of magnitude.2, 13-17 Experiments on bulk STO18 samples and STO films19 indicate that the enhanced conduction induced by oxygen vacancies is associated with defect states introduced in the band gap of the STO at the interface, adding donor levels close to the STO conduction band edge, and acceptor levels near the valence band.18, 19 All of these earlier studies were performed on samples grown in the (001) crystal orientation. Here we report studies of the effects of various post-growth treatments on the transport properties of (111) oriented LAO/STO interface structures, which have been shown to exhibitmore »
- Authors:
-
- Northwestern Univ., Evanston, IL (United States)
- National Univ. of Singapore (Singapore)
- Publication Date:
- Research Org.:
- Northwestern Univ., Evanston, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1533048
- Alternate Identifier(s):
- OSTI ID: 1401725
- Grant/Contract Number:
- FG02-06ER46346; DEFG02-06ER46346
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials Interfaces
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 3; Journal ID: ISSN 2196-7350
- Publisher:
- Wiley-VCH
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; chemistry; materials science; anisotropy; LAO/STO; oxygen vacancies
Citation Formats
Davis, Samuel Kenneth, Huang, Zhen, Han, Kun, Ariando, None, Venkatesan, Thirumalai, and Chandrasekhar, Venkat. Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO3/SrTiO3 Interface Structures. United States: N. p., 2016.
Web. doi:10.1002/admi.201600830.
Davis, Samuel Kenneth, Huang, Zhen, Han, Kun, Ariando, None, Venkatesan, Thirumalai, & Chandrasekhar, Venkat. Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO3/SrTiO3 Interface Structures. United States. https://doi.org/10.1002/admi.201600830
Davis, Samuel Kenneth, Huang, Zhen, Han, Kun, Ariando, None, Venkatesan, Thirumalai, and Chandrasekhar, Venkat. Fri .
"Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO3/SrTiO3 Interface Structures". United States. https://doi.org/10.1002/admi.201600830. https://www.osti.gov/servlets/purl/1533048.
@article{osti_1533048,
title = {Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO3/SrTiO3 Interface Structures},
author = {Davis, Samuel Kenneth and Huang, Zhen and Han, Kun and Ariando, None and Venkatesan, Thirumalai and Chandrasekhar, Venkat},
abstractNote = {The two dimensional conducting gas that forms at the interface between the two insulators LaAlO3 (LAO) and SrTiO3 (STO)1, 2 has garnered a lot of attention due to wide variety of physical phenomena that it exhibits, including strong spin–orbit coupling,3, 4 superconductivity,5-8 magnetism,7-12 and localization effects,13 among others. From the earliest studies,1 it has been well established that the conditions during film growth or the post-growth treatment of samples can have a substantial effect on the properties of the interface. In particular, the amount of oxygen vacancies introduced during growth or through post-growth treatment can change the conductance of the LAO/STO interface by orders of magnitude.2, 13-17 Experiments on bulk STO18 samples and STO films19 indicate that the enhanced conduction induced by oxygen vacancies is associated with defect states introduced in the band gap of the STO at the interface, adding donor levels close to the STO conduction band edge, and acceptor levels near the valence band.18, 19 All of these earlier studies were performed on samples grown in the (001) crystal orientation. Here we report studies of the effects of various post-growth treatments on the transport properties of (111) oriented LAO/STO interface structures, which have been shown to exhibit a strong anisotropy of their properties along different crystal directions.20 As with the (001) samples, we find that the presence of oxygen vacancies increases the conductance of the interface, but at the same time also substantially decreases the anisotropy. This suggests that the defect states introduced by oxygen vacancies contribute isotropically to charge transport, partially masking the strongly anisotropic contribution of the intrinsic bands. In addition, our work shows that one can reversibly tune the transport properties of LAO/STO interface samples by applying appropriate post-growth treatment.},
doi = {10.1002/admi.201600830},
journal = {Advanced Materials Interfaces},
number = 3,
volume = 4,
place = {United States},
year = {Fri Dec 02 00:00:00 EST 2016},
month = {Fri Dec 02 00:00:00 EST 2016}
}
Web of Science
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