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Title: Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO3 Thin Films

Abstract

Abstract Despite continued interest in the multiferroic BiFeO 3 for a diverse range of applications, use of this material is limited by its poor electrical leakage. This work demonstrates some of the most resistive BiFeO 3 thin films reported to date via defect engineering achieved via high‐energy ion bombardment. High leakage in as‐grown BiFeO 3 thin films is shown to be due to the presence of moderately shallow isolated trap states, which form during growth. Ion bombardment is shown to be an effective way to reduce this free carrier transport (by up to ≈4 orders of magnitude) by trapping the charge carriers in bombardment‐induced, deep‐lying defect complexes and clusters. The ion bombardment is also found to give rise to an increased resistance to switching as a result of an increase in defect concentration. This study demonstrates a systematic ion‐dose‐dependent increase in the coercivity, extension of the defect‐related creep regime, increase in the pinning activation energy, decrease in the switching speed, and broadening of the field distribution of switching. Ultimately, the use of such defect‐engineering routes to control materials will require identification of an optimum range of ion dosage to achieve maximum enhancement in resistivity with minimum impact on ferroelectric switching.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [2];  [2]
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  1. Univ. of California, Berkeley, CA (United States)
  2. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1530334
Alternate Identifier(s):
OSTI ID: 1410720
Grant/Contract Number:  
AC02-05CH11231; DE‐SC‐0012375
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials Interfaces
Additional Journal Information:
Journal Volume: 5; Journal Issue: 3; Journal ID: ISSN 2196-7350
Publisher:
Wiley-VCH
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Saremi, Sahar, Xu, Ruijuan, Dedon, Liv R., Gao, Ran, Ghosh, Anirban, Dasgupta, Arvind, and Martin, Lane W. Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO3 Thin Films. United States: N. p., 2017. Web. doi:10.1002/admi.201700991.
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Saremi, Sahar, Xu, Ruijuan, Dedon, Liv R., Gao, Ran, Ghosh, Anirban, Dasgupta, Arvind, & Martin, Lane W. Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO3 Thin Films. United States. https://doi.org/10.1002/admi.201700991
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Saremi, Sahar, Xu, Ruijuan, Dedon, Liv R., Gao, Ran, Ghosh, Anirban, Dasgupta, Arvind, and Martin, Lane W. Thu . "Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO3 Thin Films". United States. https://doi.org/10.1002/admi.201700991. https://www.osti.gov/servlets/purl/1530334.
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@article{osti_1530334,
title = {Electronic Transport and Ferroelectric Switching in Ion-Bombarded, Defect-Engineered BiFeO3 Thin Films},
author = {Saremi, Sahar and Xu, Ruijuan and Dedon, Liv R. and Gao, Ran and Ghosh, Anirban and Dasgupta, Arvind and Martin, Lane W.},
abstractNote = {Abstract Despite continued interest in the multiferroic BiFeO 3 for a diverse range of applications, use of this material is limited by its poor electrical leakage. This work demonstrates some of the most resistive BiFeO 3 thin films reported to date via defect engineering achieved via high‐energy ion bombardment. High leakage in as‐grown BiFeO 3 thin films is shown to be due to the presence of moderately shallow isolated trap states, which form during growth. Ion bombardment is shown to be an effective way to reduce this free carrier transport (by up to ≈4 orders of magnitude) by trapping the charge carriers in bombardment‐induced, deep‐lying defect complexes and clusters. The ion bombardment is also found to give rise to an increased resistance to switching as a result of an increase in defect concentration. This study demonstrates a systematic ion‐dose‐dependent increase in the coercivity, extension of the defect‐related creep regime, increase in the pinning activation energy, decrease in the switching speed, and broadening of the field distribution of switching. Ultimately, the use of such defect‐engineering routes to control materials will require identification of an optimum range of ion dosage to achieve maximum enhancement in resistivity with minimum impact on ferroelectric switching.},
doi = {10.1002/admi.201700991},
journal = {Advanced Materials Interfaces},
number = 3,
volume = 5,
place = {United States},
year = {Thu Nov 30 00:00:00 EST 2017},
month = {Thu Nov 30 00:00:00 EST 2017}
}
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https://doi.org/10.1002/admi.201700991
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