Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O
Abstract
Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65× 1020 cm-3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. In conclusion, the ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.
- Authors:
-
- Univ. of California, Berkeley, CA (United States). Dept. of Physics
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1511312
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 94; Journal Issue: 21; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Lee, H. -J., Helgren, E., and Hellman, F. Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O. United States: N. p., 2009.
Web. doi:10.1063/1.3147856.
Lee, H. -J., Helgren, E., & Hellman, F. Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O. United States. https://doi.org/10.1063/1.3147856
Lee, H. -J., Helgren, E., and Hellman, F. Mon .
"Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O". United States. https://doi.org/10.1063/1.3147856. https://www.osti.gov/servlets/purl/1511312.
@article{osti_1511312,
title = {Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O},
author = {Lee, H. -J. and Helgren, E. and Hellman, F.},
abstractNote = {Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65× 1020 cm-3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. In conclusion, the ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.},
doi = {10.1063/1.3147856},
journal = {Applied Physics Letters},
number = 21,
volume = 94,
place = {United States},
year = {Mon May 25 00:00:00 EDT 2009},
month = {Mon May 25 00:00:00 EDT 2009}
}
Web of Science
Figures / Tables:
Works referenced in this record:
Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO
journal, January 2001
- Zhang, S. B.; Wei, S. -H.; Zunger, Alex
- Physical Review B, Vol. 63, Issue 7
Paramagnetism of the Co sublattice in ferromagnetic films
journal, September 2007
- Barla, A.; Schmerber, G.; Beaurepaire, E.
- Physical Review B, Vol. 76, Issue 12
Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor
journal, March 2004
- Toyosaki, Hidemi; Fukumura, Tomoteru; Yamada, Yasuhiro
- Nature Materials, Vol. 3, Issue 4
Giant magnetic moment in an anomalous ferromagnetic insulator: Co-doped
journal, January 2006
- Song, C.; Geng, K. W.; Zeng, F.
- Physical Review B, Vol. 73, Issue 2
Microstructural and magnetic properties of ZnO:TM (TM=Co,Mn) diluted magnetic semiconducting nanoparticles
journal, November 2006
- Mandal, S. K.; Das, A. K.; Nath, T. K.
- Journal of Applied Physics, Vol. 100, Issue 10
Metal-insulator transition in Co-doped : Magnetotransport properties
journal, May 2006
- Xu, Qingyu; Hartmann, Lars; Schmidt, Heidemarie
- Physical Review B, Vol. 73, Issue 20
Origin of ferromagnetism in ZnO codoped with Ga and Co: Experiment and theory
journal, October 2008
- He, Y.; Sharma, Parmanand; Biswas, Krishanu
- Physical Review B, Vol. 78, Issue 15
Role of metallic cobalt in room temperature dilute ferromagnetic semiconductor Zn0.95Co0.05O1−δ
journal, January 2008
- Liu, Q.; Gan, C. L.; Yuan, C. L.
- Applied Physics Letters, Vol. 92, Issue 3
Making Nonmagnetic Semiconductors Ferromagnetic
journal, August 1998
- Ohno, H.
- Science, Vol. 281, Issue 5379
Impurity control in Co-doped ZnO films through modifying cooling atmosphere
journal, January 2009
- Liu, Yinglin; MacManus-Driscoll, Judith L.
- Applied Physics Letters, Vol. 94, Issue 2
Ferromagnetism in Ni-doped ZnO films: Extrinsic or intrinsic?
journal, January 2009
- Snure, Michael; Kumar, Dhananjay; Tiwari, Ashutosh
- Applied Physics Letters, Vol. 94, Issue 1
First principles materials design for semiconductor spintronics
journal, March 2002
- Sato, K.; Katayama-Yoshida, H.
- Semiconductor Science and Technology, Vol. 17, Issue 4
MATERIALS SCIENCE: Seeking Room-Temperature Ferromagnetic Semiconductors
journal, June 2006
- Ando, K.
- Science, Vol. 312, Issue 5782
Magnetism of (Zn,Co)O thin films probed by x-ray absorption spectroscopies
journal, January 2008
- Rode, K.; Mattana, R.; Anane, A.
- Applied Physics Letters, Vol. 92, Issue 1
Direct Kinetic Correlation of Carriers and Ferromagnetism in
journal, July 2006
- Kittilstved, Kevin R.; Schwartz, Dana A.; Tuan, Allan C.
- Physical Review Letters, Vol. 97, Issue 3
Electric-field control of ferromagnetism
journal, December 2000
- Ohno, H.; Chiba, D.; Matsukura, F.
- Nature, Vol. 408, Issue 6815
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Control of magnetism by electric fields
journal, March 2015
- Matsukura, Fumihiro; Tokura, Yoshinori; Ohno, Hideo
- Nature Nanotechnology, Vol. 10, Issue 3
Influence of free charge carrier density on the magnetic behavior of (Zn,Co)O thin film studied by Field Effect modulation of magnetotransport
journal, January 2019
- Bellingeri, E.; Rusponi, S.; Lehnert, A.
- Scientific Reports, Vol. 9, Issue 1
Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
journal, May 2012
- Li, Li; Guo, Y.; Cui, X. Y.
- Physical Review B, Vol. 85, Issue 17
Influence of free charge carrier density on the magnetic behavior of (Zn,Co)O thin film studied by Field Effect modulation of magnetotransport
journal, January 2019
- Bellingeri, E.; Rusponi, S.; Lehnert, A.
- Scientific Reports, Vol. 9, Issue 1
Enhanced Photoluminescence and Raman Properties of Al-Doped ZnO Nanostructures Prepared Using Thermal Chemical Vapor Deposition of Methanol Assisted with Heated Brass
journal, March 2015
- Thandavan, Tamil Many K.; Gani, Siti Meriam Abdul; San Wong, Chiow
- PLOS ONE, Vol. 10, Issue 3