Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon
Abstract
N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. Finally, by directly correlating micro-photoluminescence-based minority carrier lifetime mapping and synchrotron-based micro-X-ray fluorescence mapping of Fe-rich precipitates, we develop a quantitative, physical understanding of the recombination activity of Fe-rich precipitates in n-type mc-Si.
- Authors:
-
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Albert-Ludwigs-Univ. Freiburg, Freiburg im Breisgau (Germany). Freiburger Materialforschungszentrum
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Aalto Univ., Espoo (Finland)
- Fraunhofer Inst. for Solar Energy Systems, Freiburg (Germany)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- U.S. Department of Defense (DOD); National Science Foundation (NSF); European Research Council (ERC); European Commission - Community Research and Development Information Service (CORDIS) - Seventh Framework Programme (FP7); USDOE Office of Science (SC)
- OSTI Identifier:
- 1505165
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- IEEE Journal of Photovoltaics
- Additional Journal Information:
- Journal Volume: 8; Journal Issue: 6; Journal ID: ISSN 2156-3381
- Publisher:
- IEEE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; correlative microscopy; micro-X-ray fluorecence; micro-photoluminescence; n-type; precipitate; silicon; synchrotron
Citation Formats
Morishige, Ashley E., Heinz, Friedemann D., Laine, Hannu S., Schon, Jonas, Kwapil, Wolfram, Lai, Barry, Savin, Hele, Schubert, Martin C., and Buonassisi, Tonio. Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon. United States: N. p., 2018.
Web. doi:10.1109/JPHOTOV.2018.2869544.
Morishige, Ashley E., Heinz, Friedemann D., Laine, Hannu S., Schon, Jonas, Kwapil, Wolfram, Lai, Barry, Savin, Hele, Schubert, Martin C., & Buonassisi, Tonio. Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon. United States. https://doi.org/10.1109/JPHOTOV.2018.2869544
Morishige, Ashley E., Heinz, Friedemann D., Laine, Hannu S., Schon, Jonas, Kwapil, Wolfram, Lai, Barry, Savin, Hele, Schubert, Martin C., and Buonassisi, Tonio. Wed .
"Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon". United States. https://doi.org/10.1109/JPHOTOV.2018.2869544. https://www.osti.gov/servlets/purl/1505165.
@article{osti_1505165,
title = {Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon},
author = {Morishige, Ashley E. and Heinz, Friedemann D. and Laine, Hannu S. and Schon, Jonas and Kwapil, Wolfram and Lai, Barry and Savin, Hele and Schubert, Martin C. and Buonassisi, Tonio},
abstractNote = {N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. Finally, by directly correlating micro-photoluminescence-based minority carrier lifetime mapping and synchrotron-based micro-X-ray fluorescence mapping of Fe-rich precipitates, we develop a quantitative, physical understanding of the recombination activity of Fe-rich precipitates in n-type mc-Si.},
doi = {10.1109/JPHOTOV.2018.2869544},
journal = {IEEE Journal of Photovoltaics},
number = 6,
volume = 8,
place = {United States},
year = {Wed Sep 19 00:00:00 EDT 2018},
month = {Wed Sep 19 00:00:00 EDT 2018}
}
Web of Science
Figures / Tables:
Works referencing / citing this record:
Limiting Defects in n‐Type Multicrystalline Silicon Solar Cells
journal, July 2019
- Schubert, Martin C.; Schindler, Florian; Schön, Jonas
- physica status solidi (a), Vol. 216, Issue 17
Figures / Tables found in this record: