Investigating PID Shunting in Polycrystalline CIGS Devices via Multi-Scale, Multi-Technique Characterization

Harvey, Steven P.; Guthrey, Harvey; Muzzillo, Christopher P.; Teeter, Glenn; Mansfield, Lorelle; Hacke, Peter; Johnston, Steve; Al-Jassim, Mowafak

doi:10.1109/JPHOTOV.2019.2892874

Title: Investigating PID Shunting in Polycrystalline CIGS Devices via Multi-Scale, Multi-Technique Characterization

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Abstract

We investigated potential-induced degradation (PID) in CuIn_1-xGa_xSe₂ (CIGS) mini-modules stressed in the laboratory. Small cores were removed from the modules and were subjected to analysis. We completed a proof-of-concept correlative study relating cathodoluminescence to sodium content via time-of-flight secondary-ion mass spectrometry imaging. By comparing one-dimensional depth profile results and three-dimensional tomography results on stressed and unstressed CIGS mini-modules, we can see that PID in CIGS results from sodium migration through absorber, most likely via grain boundaries. Potassium concentration distributions show little change when adding a voltage bias to a temperature and humidity stress. This suggests doping with other large alkali ions, such as cesium and rubidium, rather than sodium can increase the PID resistance of CIGS modules.

Authors:

Harvey, Steven P. ^[1]; Guthrey, Harvey ^[1]; Muzzillo, Christopher P. ^[1]; Teeter, Glenn ^[1]; Mansfield, Lorelle ^[1]; Hacke, Peter ^[1]; Johnston, Steve ^[1]; Al-Jassim, Mowafak ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Thu Jan 31 00:00:00 EST 2019

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1501655

Report Number(s):: NREL/JA-5K00-71525
Journal ID: ISSN 2156-3381

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Journal of Photovoltaics

Additional Journal Information:: Journal Volume: 9; Journal Issue: 2; Journal ID: ISSN 2156-3381

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 42 ENGINEERING; cathodoluminescence; CIGS; potential-induced degradation; SIMS; sodium; time-of-flight secondary-ion mass spectrometry

Citation Formats


                    Harvey, Steven P., Guthrey, Harvey, Muzzillo, Christopher P., Teeter, Glenn, Mansfield, Lorelle, Hacke, Peter, Johnston, Steve, and Al-Jassim, Mowafak. Investigating PID Shunting in Polycrystalline CIGS Devices via Multi-Scale, Multi-Technique Characterization.  United States: N. p., 2019. 
Web.  doi:10.1109/JPHOTOV.2019.2892874.

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                    Harvey, Steven P., Guthrey, Harvey, Muzzillo, Christopher P., Teeter, Glenn, Mansfield, Lorelle, Hacke, Peter, Johnston, Steve, & Al-Jassim, Mowafak. Investigating PID Shunting in Polycrystalline CIGS Devices via Multi-Scale, Multi-Technique Characterization.  United States.  https://doi.org/10.1109/JPHOTOV.2019.2892874

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                    Harvey, Steven P., Guthrey, Harvey, Muzzillo, Christopher P., Teeter, Glenn, Mansfield, Lorelle, Hacke, Peter, Johnston, Steve, and Al-Jassim, Mowafak. Thu .  
"Investigating PID Shunting in Polycrystalline CIGS Devices via Multi-Scale, Multi-Technique Characterization".  United States.  https://doi.org/10.1109/JPHOTOV.2019.2892874.  https://www.osti.gov/servlets/purl/1501655.

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@article{osti_1501655,

  title        = {Investigating PID Shunting in Polycrystalline CIGS Devices via Multi-Scale, Multi-Technique Characterization},

  author       = {Harvey, Steven P. and Guthrey, Harvey and Muzzillo, Christopher P. and Teeter, Glenn and Mansfield, Lorelle and Hacke, Peter and Johnston, Steve and Al-Jassim, Mowafak},

  abstractNote = {We investigated potential-induced degradation (PID) in CuIn1-xGaxSe2 (CIGS) mini-modules stressed in the laboratory. Small cores were removed from the modules and were subjected to analysis. We completed a proof-of-concept correlative study relating cathodoluminescence to sodium content via time-of-flight secondary-ion mass spectrometry imaging. By comparing one-dimensional depth profile results and three-dimensional tomography results on stressed and unstressed CIGS mini-modules, we can see that PID in CIGS results from sodium migration through absorber, most likely via grain boundaries. Potassium concentration distributions show little change when adding a voltage bias to a temperature and humidity stress. This suggests doping with other large alkali ions, such as cesium and rubidium, rather than sodium can increase the PID resistance of CIGS modules.},

  doi          = {10.1109/JPHOTOV.2019.2892874},

  journal      = {IEEE Journal of Photovoltaics},

  number       = 2,

  volume       = 9,

  place        = {United States},

  year         = {Thu Jan 31 00:00:00 EST 2019},

  month        = {Thu Jan 31 00:00:00 EST 2019}

}

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