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Title: Identifying the dominant interstitial complex in dilute GaAsN alloys

Abstract

Significant composition-dependent incorporation of N into non-substitutional sites is often reported for dilute GaAsN alloys. To distinguish (N-N)As, (N-As)As, and (AsGa-NAs) complexes, in this work we compare Rutherford backscattering spectrometry and nuclear reaction analysis (NRA) spectra with Monte Carlo-Molecular Dynamics simulations along the [100], [110], and [111] directions. For the Monte Carlo simulation, we assume that (N-N)As is aligned along the [111] direction, while (N-As)As is aligned along the [010] direction. The measured channeling NRA spectra exhibit the highest (lowest) yield in the [111] ([100]) directions. Similar trends are observed for simulations of (N-As)As, suggesting that (N-As)As is the dominant interstitial complex in dilute GaAsN.

Authors:
ORCiD logo [1];  [1];  [2]; ORCiD logo [3]
+ Show Author Affiliations
  1. Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering and Dept. of Physics
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
National Science Foundation (NSF); USDOE Office of Science (SC)
OSTI Identifier:
1495143
Report Number(s):
LA-UR-15-28739
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
89233218CNA000001; DMR 1410282
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 22; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Jen, T., Vardar, G., Wang, Y. Q., and Goldman, R. S. Identifying the dominant interstitial complex in dilute GaAsN alloys. United States: N. p., 2015. Web. doi:10.1063/1.4935857.
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Jen, T., Vardar, G., Wang, Y. Q., & Goldman, R. S. Identifying the dominant interstitial complex in dilute GaAsN alloys. United States. https://doi.org/10.1063/1.4935857
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Jen, T., Vardar, G., Wang, Y. Q., and Goldman, R. S. Mon . "Identifying the dominant interstitial complex in dilute GaAsN alloys". United States. https://doi.org/10.1063/1.4935857. https://www.osti.gov/servlets/purl/1495143.
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@article{osti_1495143,
title = {Identifying the dominant interstitial complex in dilute GaAsN alloys},
author = {Jen, T. and Vardar, G. and Wang, Y. Q. and Goldman, R. S.},
abstractNote = {Significant composition-dependent incorporation of N into non-substitutional sites is often reported for dilute GaAsN alloys. To distinguish (N-N)As, (N-As)As, and (AsGa-NAs) complexes, in this work we compare Rutherford backscattering spectrometry and nuclear reaction analysis (NRA) spectra with Monte Carlo-Molecular Dynamics simulations along the [100], [110], and [111] directions. For the Monte Carlo simulation, we assume that (N-N)As is aligned along the [111] direction, while (N-As)As is aligned along the [010] direction. The measured channeling NRA spectra exhibit the highest (lowest) yield in the [111] ([100]) directions. Similar trends are observed for simulations of (N-As)As, suggesting that (N-As)As is the dominant interstitial complex in dilute GaAsN.},
doi = {10.1063/1.4935857},
journal = {Applied Physics Letters},
number = 22,
volume = 107,
place = {United States},
year = {Mon Nov 30 00:00:00 EST 2015},
month = {Mon Nov 30 00:00:00 EST 2015}
}
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Journal Article:
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https://doi.org/10.1063/1.4935857
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Cited by: 9 works
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    Works referencing / citing this record:

    Bi-enhanced N incorporation in GaAsNBi alloys
    journal, June 2017

    • Occena, J.; Jen, T.; Rizzi, E. E.
    • Applied Physics Letters, Vol. 110, Issue 24
    • DOI: 10.1063/1.4984227

    Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys
    journal, August 2019

    • Occena, J.; Jen, T.; Mitchell, J. W.
    • Applied Physics Letters, Vol. 115, Issue 8
    • DOI: 10.1063/1.5057424
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